Silicon Phototransistor in SMT Plastic Package
OP580
• • •
W ide Acceptance Angle Fast Response Time Plastic Leadless Chip Carrier (PLCC)
The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280 infrared LED. Applications • • Non-Contact Position Sensing Datum detection • • Machine automation Optical encoders
Relative Response vs. Wavelength
100%
80%
Relative Response
60%
40%
OP580
20%
0% 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Pb
RoHS
A subsidiary of TT electronics plc
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
SMT Silicon Phototransistor
OP580
Absolute Maximum Ratings
TA = 25o C unless otherwise noted
Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. -40° C to +85° C -25° C to +85° C 260° C(1) 30 V 5V 20 mA 75 mW (2)
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
IC(ON) VCE(SAT) ICEO V(BR)CEO V(BR)ECO tr, tf 3. 4.
PARAMETER
On-State Collector Current Collector-Emitter Saturation Voltage Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Rise and Fall Times
MIN
1.0
TYP
MAX
UNITS
mA
CONDITIONS
VCE = 5.0V, Ee = 5.0mW/cm2 (3) IC = 100µA, Ee = 2.0mW/cm2 (3) VCE = 5.0V, Ee = 0 (4) IC = 100µA IE = 100µA IC = 1mA, RL = 1KΩ
0.4 100 30 5 15
V nA V V µs
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04 T -3/4) To Calculate typical collector dark current in µA, use the formula ICEO = 10 where TA is the ambient temperature in ° C. A
Relative On-State Collector Current vs. Irradiance
160% 140%
Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C
Relative On-State Collector Current vs. Temperature
140% 130%
Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 80°C
Relative Collector Current
120% 100% 80% 60% 40% 20%
Relative Collector Current
120% 110% 100% 90% 80% 70%
-40°C
0
1.0
2.0
3.0
4.0
5.0
6.0
2
7.0
8.0
-25
0
25
50
75
100
Ee—Irradiance (mW/cm )
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Temperature—(°C)
Issue 1.1 07.05 Page 2 of 4
SMT Silicon Phototransistor
OP580
Relative Response vs. Angular Position
100% 1.40
Relative On-State Collector Current vs. Collector-Emitter Voltage
IC(ON) - On-State Collector Current (mA)
80%
1.20 1.00 0.80
W/ 6m
cm
2
Relative Response
W /c 5m
m
2
60%
m 4 mW/c
2
3 mW/cm
2
40%
0.60 0.40 0.20
2 mW/cm2
20%
1 mW/cm2
0% -90 -60 -30 0 30 60 90 0 0.1 0.2 0.3 0.4 0.5
Angular Position (Degrees)
Collector-Emitter Voltage (V)
Collector-Emitter Dark Current vs. Temperature
1000
Conditions: Ee = 0 mW/cm2 VCE = 10V
Collector-Emitter Dark Current (nA)
100
10
1
0 -25 0 25 50 75 100
Temperature—(°C)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 07.05 Page 3 of 4
SMT Silicon Phototransistor
OP580
1
2 COLLECTOR MARK
PIN FUNCTION 1 2 Emitter Collector
RECOMMENDED SOLDER PADS [4.50±0.10] .177±.0039 [1.50±0.10] .059±.0039 [1.50±0.10] .059±.0039
[2.60±0.10] .102±.0039
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 07.05 Page 4 of 4
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