OPB100SZ

Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” (91.4 cm) Low profile package 24” (61.0 cm) wire leads Description: The OPB100 series consists of an infrared LED (OPB100EZ) and phototransistor (OPB100SZ) in separate plastic housings. The low cost, snap-in design requires no screws or other mounting hardware for ease of installation. The emitter and sensor are not apertured, which allows separation distances in excess of 36” (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.062” (1.57 mm) thick material. This product is designed for general switching and low-speed data communications applications. Applications: • • • • • Non-contact reflective object Non-contact interruptive sensing Assembly line automation Machine automation Machine safety Emitter (LED) Part Number OPB100Z OPB100-EZ OPB100-SZ Ordering Information LED Peak Wavelength Sensor Lead Length / Spacing 880 nm Transistor 24" / 26 AWG Wire Phototransistor Color/Pin Red-1 Black-2 White-3 Green-4 Description Anode Cathode Collector Emitter Red White SNAP BODY 26 AWG UL Rated Symbolize Cover Black Green RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.1 01/06 Page 1 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range Operating Temperature Range(1) Input LED (OP298 for additional information) Forward DC Current Peak Forward Current (1 µs pulse width, 300 pps) Reverse DC Voltage Power Dissipation (2) -40o C to +85o C -40o C to +80o C 100 mA 1A 2V 142 mW Output Phototransistor (OP598 for additional information) Collector-Emitter Voltage Emitter-Collector Voltage Collector DC Current Power Dissipation (3) 30 V 5V 50 mA 250 mW Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP298 for additional information — for reference only) VF IR qHP EE (APT) Forward Voltage Reverse Current Emission Angle at Half Power Points Aperture Radiant Incidence 2.4 25 1.7 15 V µA Degree IF = 20 mA VR= 10 V IF = 20 mA IF = 100 mA mW/cm2 Distance = 1.43” (3.63 cm) Aperture = 0.25” (6.35 mm) Output Phototransistor (See OP598 for additional information — for reference only) V(BR)CEO V(BR)ECO ICEO VCE(SAT) IC(ON) Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Collector-Emitter Saturation Voltage On-State Collector Current 30 5 5 100 0.4 V V nA V mA IC = 1 mA, EE = 0mw/cm2 (no light) IC = 100 µA, EE = 0mw/cm2 (no light) VCE = 10V, IF = 0, EE = 0 mw/cm2 (no light) IC = 400 µA, EE = 1.7 mw/cm2 VCE = 5 V, EE = 1.7 mw/cm2 Notes: 1. Derate linearly 3.33mW/°C above 25°C. 2. All parameters measured using pulse technique. 3. Derate linearly 1.43mW/°C above 25°C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A .1 01/06 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Output Current vs. Distance 100 IF=20 mA IF=50 mA Typical Output Current (mA) 10 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 11 12 Distance (inches) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A.1 01/06 Page 3 of 3