OPB700TX

Product Bulletin OPB700TX February 1997 Hi-Reliability Reflective Object Sensor Types OPB700TX, OPB700TXV ORANG WHITE GREEN BLUE Features • Non-contact switching • Low profile to facilitate stacking • Hermetically sealed components • Components processed to Optek’ s screening program patterned after MIL-PRF-19500 for TX and TXV devices • 24.0 inches (457.2mm) minimum length lead wires conforming to MIL-W-16878 Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +125 C o o Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C o o Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V (1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V (1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW (1) Derate linearly 1.00 mW/o C above 25o C. (2) Measured using an Eastman Kodak neutral white test card having 90% diffuse reflectance as a reflective surface. (3) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and no reflecting surface. (4) “ is the distance from the assembly head to the reflective surface. d” (5) Methanol or isopropyl alcohols are recommended as cleaning agents. Description The OPB700TX and OPB700TXV consist of gallium aluminum arsenide LED’ and silicon phototransistors s mounted side-by side on converging optical axes in a high temperature black plastic housing. The phototransistor responds to the radiation from the LED only when a reflective object passes within its field of view. Lead wires are #26 AWG polytetraflouroethylene (PTEF) insulated conforming to MIL-W-16878. Typical screening and lot acceptance tests are provided on page 13-4. Notes: Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-36 (972) 323-2200 Fax (972) 323-2396 Types OPB700TX, OPB700TXV Electrical Characteristics (TA = 25o C unless otherwise noted) Symbol Input Diode Forward Voltage(6) VF 1.10 1.30 0.90 IR Reverse Current 1.60 1.80 1.40 0.1 1.80 2.00 1.70 100 V V V µA IF = 50.0 mA IF = 50.0 mA, TA = -55o C IF = 50.0 mA, TA = 100o C VR = 2.0 V Parameter Min Typ Max Units Test Conditions Output Phototransistor V(BR)CEO V(BR)ECO IC(off) 10 100 Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current 50 7.0 110 10.0 100 V V nA µA IC = 1.0 mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10.0 V, IF = 0 VCE = 10.0 V, IF = 0, TA = 100o C Combined On-State Collector Current d = 0.20 in. (5.08mm)(2,3,6) IC(on) 50 25 25 ICX VCE(SAT) tr tf Crosstalk (No Reflective Surface(3) Collector-Emitter Saturation Voltage d = 0.20 in. (5.08mm)(2,3) Output Rise Time Output Fall Time 12.0 12.0 2.0 0.40 20.0 20.0 200 µA µA µA µA V µs µs VCE = 5.0 V, IF = 40.0 mA VCE = 5.0 V, IF = 40.0 mA, TA = -55o C VCE = 5.0 V, IF = 40.0 mA, TA = 100o C VCE = 5.0 V, IF = 40.0 mA IC = 10.0 µA, IF = 40.0 mA VCC = 10.0 V, IF = 20.0 mA, RL = 1,000 Ω (6) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-37