OPB821XV

Product Bulletin OPB821TX September 1996 Hi-Rel Slotted Optical Switches Types OPB821TX, OPB821TXV 24.0 (609.60) #24 AWG Features • Non-contact switching • Hermetically sealed components • Components processed to Optek’ s screening program patterned after MIL-PRF-19500 for TX and TXV devices Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Notes: (1) Derate Linearly 1.00 mW/o C above 25o C. (2) Methanol or isopropanol are recommended cleaning agents. Description The OPB821TX or OPB821TXV consists of a gallium aluminum arsenide LED and a silicon phototransistor soldered into a printed circuit board, then mounted in a high temperature plastic housing on opposite sides of an 0.080 inch (2.03 mm) wide slot. Lead wires are #24 AWG polytetraflouroethylene (PTFE) insulated conforming to MIL-W-16878. Phototransistor switching takes place whenever an opaque object passes through the slot. For maximum output signal, neither the LED or the phototransistor in the OPB821TX or the OPB821TXV is apertured. The OPB821TX and OPB821TXV use optoelectronic components that have been processed and tested as either TX or TXV components per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-38 (972) 323-2200 Fax (972) 323-2396 Types OPB821TX, OPB821TXV Electrical Characteristics (TA = 25o C unless otherwise noted) Symbol Input Diode Forward Voltage(3) VF 1.00 1.20 0.80 IR Reverse Current 1.35 1.55 1.20 0.1 1.70 1.90 1.60 100 V V V µA IF = 20.0 mA IF = 20.0 mA, TA = -55o C IF = 20.0 mA, TA = 100o C VR = 2.0 V Parameter Min Typ Max Units Test Conditions Output Phototransistor V(BR)CEO V(BR)ECO IC(off) 10 100 Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current 50 7.0 110 10.0 0.2 100 V V nA µA µA µA µA 0.20 12.0 12.0 0.30 20.0 20.0 V µs µs IC = 1.0 mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10.0 V, IF = 0 VCE = 10.0 V, IF = 0, TA = 100o C Coupled On-State Collector Current(3) IC(on) 800 500 500 VCE(SAT) tr tf Collector-Emitter Saturation Voltage Output Rise Time Output Fall Time VCE = 10.0 V, IF = 20.0 mA VCE = 10.0 V, IF = 20.0 mA, TA = -55o C VCE = 10.0 V, IF = 20.0 mA, TA = 100o C IC = 250 µA, IF = 20.0 mA VCC = 10.0 V, IF = 20.0 mA, RL = 1,000 Ω (3) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-39