From Deep UV to Mid-IR
An ITW Company
Photodiode 100 mm2 with
Integrated Thin Film Filter
AXUV100TF400
FEATURES
• 100 mm2 Square Active Area
• Responsivity @ 40 nm 0.15 A/W
• Detection Range 18 nm to 80 nm
• Shipped with Protective Cover
Electro-Optical Characteristics at 25°C
Parameters
Test Conditions
Min
Active Area
10 mm x 10 mm
100
mm2
Responsivity
@ 40 nm
0.15
A/W
Shunt Resistance, Rsh
@ ±10 mV
20
Reverse Breakdown Voltage, VR
1R = 1 µA
5
Capacitance, C
VR = 0 V
Typ
Max
Units
Ohms
10
10
Volts
44
nF
Thermal Parameters
Storage and Operating Temperature Range
Units
Ambient
–10° to 40°C
Nitrogen or Vacuum
–20 to 80°C
Maximum Junction Temperature
70°C
Lead Soldering Temperature*
260°C
*0.080" from case for 10 seconds.
Revision April 20, 2019
Page 1 of 2
From Deep UV to Mid-IR
Photodiode 100 mm2 with
Integrated Thin Film Filter
An ITW Company
AXUV100TF400
Typical Responsivity at 25°C
RESPONSIVITY (A/W)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20
40
60
80
WAVELENGTH (nm)
100
120
140
Package Information
Dimensions are in inch [metric] units.
Specifications are subject to change without prior notice.
1260 Calle Suerte, Camarillo, California 93012
Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com
Revision April 20, 2019
Page 2 of 2
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