AXUV100TI/C2

From Deep UV to Mid-IR An ITW Company Photodiode 100 mm2 with Integrated Thin Film Filter AXUV100TF030 FEATURES • 100 mm2 Square Active Area • Responsivity @ 3 nm 0.16 A/W • Detection Range 1 nm to 12 nm • Shipped with Protective Cover Electro-Optical Characteristics at 25°C Parameters Test Conditions Min Active Area 10 mm x 10 mm 100 mm2 Responsivity @ 3 nm 0.16 A/W Shunt Resistance, Rsh @ ±10 mV 20 Reverse Breakdown Voltage, VR 1R = 1 µA 5 Capacitance, C VR = 0 V Typ Max Units Ohms 10 10 Volts 44 nF Thermal Parameters Storage and Operating Temperature Range Units Ambient –10° to 40°C Nitrogen or Vacuum –20 to 80°C Lead Soldering Temperature* 260°C *0.080" from case for 10 seconds. Revision November 26, 2019 Page 1 of 2 From Deep UV to Mid-IR Photodiode 100 mm2 with Integrated Thin Film Filter An ITW Company AXUV100TF030 Typical Responsivity at 25°C RESPONSIVITY (A/W) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 2 4 6 8 10 12 WAVELENGTH (nm) 14 16 18 20 Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 2 of 2