OD-100

SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE (CASE) EPOXY • • • • • .357 .362 .039 .048 .100 .018 .297 .302 .200 .031 .014 .018 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. 13 .130 MAX OD-100 20 CATHODE .040 45* ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS IF = 500mA IF = 10A Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C IF = 50mA DE Half Intensity Beam Angle, θ MIN 80 CE IF = 500mA IF = 500mA IR = 10μA VR = 0V Fall Time TYP 100 1300 MAX UNITS mW 60 mW/sr 880 nm 80 nm 110 Deg 1.65 5 30 FE Rise Time MB E R .500 2 Volts Volts 90 pF 0.7 μsec 0.7 μsec Power Dissipation1 LI ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 1000 mW Continuous Forward Current OF 500mA Peak Forward Current (10μs, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, RTHJA1 145°C/W Typical Thermal Resistance, RTHJA2 75°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS 100 INFINITE HEAT SINK 700 600 500 NO HEAT SINK 400 300 100 100 50 75 AMBIENT TEMPERATURE (°C) t D= T 0.1 1 DUTY CYCLE, D (%) 80 IF = 250mA 70 IF = 450mA 103 STRESS TIME, (hrs) 104 40 20 FE 8 RELATIVE POWER OUTPUT FORWARD I-V CHARACTERISTICS 10 LI 6 4 2 100 60 0 –100 –80 105 DE 102 80 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 101 10 RADIATION PATTERN 100 60 t T Ip DEGRADATION CURVE IF = 150mA 12 t = 100μs 1 0.1 0.01 100 90 50 FORWARD CURRENT, IF (amps) 25 t = 50μs R 0 t = 10μs 10 MB E POWER DISSIPATION (mW) 800 200 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 13 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 THERMAL DERATING CURVE RELATIVE POWER OUTPUT (%) 1,100 OD-100 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 1,000 EN D 100 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013