OD-148-C

HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-148-C .014 • High reliability LPE GaAlAs IRLED chips • Open center emission for imaging applications • High output uniformity from emitting surfaces .008 .014 • Gold contacts for high reliability bonding EMITTING SURFACE GOLD METALLIZATION All dimensions are nominal values in inches unless otherwise specified. .002 GOLD CONTACTS N P .003 .005 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V 5 MIN 6 TYP 8 880 80 30 17 MAX UNITS mW nm nm Peak Emission Wavelength, P Spectral Bandwidth at 50%, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 1.55 1.9 Volts Volts pF sec sec 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C Power Dissipation Continuous Forward Current Reverse Voltage 190mW 100mA 5V 3A Peak Forward Current (10 s, 300 Hz) Storage and Operating Temperature Range Maximum Junction Temperature -65°C to 150°C 150°C The exact performance data depends on your package configuration and technique. Data listed in this specification is for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days from the shipment date. Opto Diode must be notified of any discrepancies within this period. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com