OD-50L

SUPER HIGH-POWER GaAlAs IR EMITTERS .250 .262 GLASS DOME .324 .332 .357 .362 .100 .018 .246 .254 FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead TO-39 hermetic package • Chip size .030 x .030 inches .200 .031 CATHODE .025 .040 45° .500 ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS MB E R .071 .095 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. 20 13 ANODE (CASE) OD-50L TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA Total Power Output, Po Radiant Intensity, Ie Spectral Bandwidth at 50%, Δλ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C mW nm IF = 50mA 80 nm IF = 500mA 1.65 IR = 10μA 7 5 FE Fall Time UNITS mW/sr VR = 0V Rise Time MAX 880 DE Half Intensity Beam Angle, θ TYP 50 600 500 CE Peak Emission Wavelength, λP MIN 40 Deg 2 Volts 30 Volts 90 pF 0.7 μsec 0.7 μsec Power Dissipation1 LI ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 1000mW Continuous Forward Current 500mA Peak Forward Current (10μs, 400Hz)2 OF 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C EN THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 100°C 150°C/W Typical 60°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS THERMAL DERATING CURVE 100 POWER DISSIPATION (mW) INFINITE HEAT SINK 800 700 600 NO HEAT SINK 500 400 300 200 100 0 100 25 50 75 AMBIENT TEMPERATURE (°C) t = 10μs 10 t = 50μs t = 100μs 1 t T 0.1 0.01 100 D= Ip DEGRADATION CURVE 0.1 10 100 RADIATION PATTERN 80 MB E IF = 250mA 80 R RELATIVE POWER OUTPUT (%) 90 70 60 40 20 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 60 t T 1 DUTY CYCLE, D (%) 100 IF = 150mA RELATIVE POWER OUTPUT (%) IF = 450mA 50 103 STRESS TIME, (hrs) 104 0 –25 105 FORWARD I-V CHARACTERISTICS 10 FE 8 6 LI FORWARD CURRENT, IF (amps) 12 102 DE 101 RELATIVE POWER OUTPUT TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 13 1,100 OD-50L 4 2 –20 –15 –10 –5 0 5 10 BEAM ANGLE, θ(deg) 15 20 25 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 75 100 POWER OUTPUT vs FORWARD CURRENT D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) 1,000 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013