OD-50W

SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES .157 .169 .100 .018 .324 .246 .332 .254 • • • • • .357 .362 .200 .031 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches 20 13 ANODE (CASE) All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. CATHODE .025 .040 45° .500 ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS MB ER GLASS .012 HIGH MAX OD-50W TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA CE Total Power Output, Po Radiant Intensity, Ie Half Intensity Beam Angle, θ Forward Voltage, VF IF = 50mA DE Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ MIN 60 Capacitance, C IR = 10μA 5 FE LI Fall Time UNITS mW 60 mW/sr nm 80 nm 110 Deg 30 VR = 0V Rise Time MAX 880 1.65 IF = 500mA Reverse Breakdown Voltage, VR TYP 75 1000 2 Volts Volts 90 pF 0.7 μsec 0.7 μsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 1000mW OF Power Dissipation1 Continuous Forward Current 500mA Peak Forward Current (10μs, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) D 260°C EN 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, RTHJA1 145°C/W Typical Thermal Resistance, RTHJA2 75°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS 100 INFINITE HEAT SINK 700 600 500 NO HEAT SINK 400 300 100 0 100 25 50 75 AMBIENT TEMPERATURE (°C) t = 100μs 1 t D= T 0.1 1 DUTY CYCLE, D (%) IF = 150mA 80 IF = 250mA 70 IF = 450mA 103 STRESS TIME, (hrs) 104 60 40 20 0 –100 –80 105 DE 102 FE 8 RELATIVE POWER OUTPUT FORWARD I-V CHARACTERISTICS 10 LI 6 4 2 100 80 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 101 10 RADIATION PATTERN 100 60 t T Ip DEGRADATION CURVE 50 FORWARD CURRENT, IF (amps) t = 50μs 0.1 0.01 100 90 12 t = 10μs 10 MB ER POWER DISSIPATION (mW) 800 200 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 13 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 THERMAL DERATING CURVE RELATIVE POWER OUTPUT (%) 1,100 OD-50W –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 75 100 POWER OUTPUT vs FORWARD CURRENT D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) 1,000 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013