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OD-850WHT

OD-850WHT

  • 厂商:

    OPTODIODE

  • 封装:

    TO-46-2

  • 描述:

    EMITTER IR 850NM 100MA TO-46

  • 详情介绍
  • 数据手册
  • 价格&库存
OD-850WHT 数据手册
From Deep UV to Mid-IR OD-850WHT High Temperature GaAlAs IR Emitters An ITW Company FEATURES • High Optical Output • • • • 850 nm Peak Emission Hermetically Sealed TO-46 Package Wide Emission Angle to Cover a Large Area Extended Operating Temperature Range • No Internal Coatings • No Derating or Heat Sink Required to 80 °C Electro-Optical Characteristics at 25 °C Parameters Test Conditions Min Typ Total Power Output, Po IF = 100 mA 19 26 mW Peak Emission Wavelength, λP IF = 20 mA 850 nm Spectral Bandwidth at 50 %, Δλ IF = 20 mA 40 nm Half Intensity Beam Angle, θ IF = 20 mA 80 Deg Forward Voltage, VF IF = 100 mA 1.6 Reverse Breakdown Voltage, VR IR = 10 µA Rise Time Fall Time 5 Max Units 2 Volts 30 Volts IFP = 20 mA 20 nsec IFP = 20 mA 20 nsec Absolute Maximum Ratings at 25°C Parameters Units 1 1 2 Power Dissipation 200 mW Continuous Forward Current 100 mA Peak Forward Current (10 µs, 200 Hz)2 300 mA Reverse Voltage 5 Volts Lead Soldering Temperature (1/16" from case for 10 sec) 260 °C Derate per thermal derating curve above 25 °C. Derate linearly above 25 °C Thermal Parameters Parameters Units Storage and Operating Temperature Range Maximum Junction Temperature 1 2 -65 °C to 150 °C 150 °C Thermal Resistance, RTHJA 1 400 °C/W Typical Thermal Resistance, RTHJA 2 135 °C/W Typical Heat transfer minimized by measuring in still air with minimum heat conducting through leads. Air circulating at a rapid rate to keep case temperature at 25 °C. Revision June 15, 2018 Page 1 of 4 From Deep UV to Mid-IR An ITW Company OD-850WHT High Temperature GaAlAs IR Emitters POWER DISSIPATION (mW) Maximum Rated Thermal Derating Curve 200 180 160 140 120 100 80 60 40 20 0 25 INFINITE HEAT SINK NO HEAT SINK 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Typical Degradation Curve 100 IF = 100 mA RELATIVE POWER OUTPUT (%) 90 IF = 20 mA IF = 50 mA IF = 100 mA (-3σ) 80 70 60 TCASE = 25 °C NO PRE BURN-IN PERFORMED 50 101 102 103 104 105 STRESS TIME, (hrs) Typical Radiation Pattern RELATIVE POWER OUTOUT (%) 100 80 60 40 20 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 BEAM ANGLE θ(deg) Revision June 15, 2018 Page 2 of 4 From Deep UV to Mid-IR An ITW Company High Temperature GaAlAs IR Emitters OD-850WHT Typical Power Output vs Temperature RELATIVE POWER OUTPUT 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 AMBIENT TEMPERATURE (°C) Typical Spectral Output 100 RELATIVE POWER OUTPUT (%) 80 60 40 20 0 750 800 850 WAVELENGTH λ (nm) 900 950 Typical Power Output vs Forward Current RELATIVE POWER OUTOUT, Po (mW) 100 10 DC 1 10 100 FORWARD CURRENT, IF (mA) Revision June 15, 2018 Page 3 of 4 From Deep UV to Mid-IR An ITW Company High Temperature GaAlAs IR Emitters OD-850WHT Package Information All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. Ordering Information OD-850-008 High Temperature Wide Angle TO-46 850 nm Emitter Shipped in Clear Vacuum Tray Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision June 15, 2018 Page 4 of 4
OD-850WHT
1. 物料型号:OD-850WHT 2. 器件简介:该红外发射器具有高光学输出,850纳米峰值发射,采用密封的TO-46封装,宽发射角度,扩展的工作温度范围,无需内部涂层,且在80°C以下无需降额或散热器。 3. 引脚分配:文档中未明确列出引脚分配,但通常TO-46封装有两根引脚,分别是阳极(A)和阴极(K)。 4. 参数特性: - 总功率输出:最小19mW,典型值26mW(在100mA电流下) - 峰值发射波长:850nm - 光谱带宽:在50%强度下为40nm - 半强度光束角度:80度 - 正向电压:在100mA电流下,典型值1.6V至2V - 反向击穿电压:在10A电流下,最小值5V至最大值30V - 上升时间/下降时间:均为20纳秒 5. 功能详解:文档提供了电光特性表、绝对最大额定值、热参数、典型退化曲线、辐射图案、功率输出与温度和正向电流的关系等详细信息。 6. 应用信息:文档未明确列出应用信息,但根据参数特性,该发射器适用于需要高温和宽角度红外发射的应用。 7. 封装信息:提供了TO-46封装的详细尺寸和材料信息,所有表面均为镀金。封装窗口盖与外壳焊接在一起。
OD-850WHT 价格&库存

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OD-850WHT
  •  国内价格 香港价格
  • 1+76.732801+9.51867
  • 10+56.4034810+6.99683
  • 100+51.12491100+6.34203

库存:7049