HIGH-SPEED GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME
OD-870F
FEATURES • High reliability LPE grown GaAlAs • High power output • Fast response • Wide range of linear power output • Custom packages available • Custom spectral emission from 780-870nm available
ANODE (CASE)
.015
.209 .220
.183 .186
.152 .154 .017
.100 .041
.030 .040 .197 .205
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
CATHODE
.036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 3.5 TYP 4.5 870 50 8 5 MAX UNITS mW nm nm
Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
2
1.5 150 15 15
1.8
Volts Volts nsec nsec pF
Deg
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 180mW 100mA 2V 3A
Peak Forward Current (10 s, 200Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1
-55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
Thermal Resistance, RTHJA2
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com
HIGH-SPEED GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK
OD-870F
10 PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10 s
1
t = 100 s t = 500 s
MAXIMUM RATINGS
0.1
t Ip T
0.1
D=
t T
0.01 0.01
1 DUTY CYCLE, D (%)
10
100
TYPICAL CHARACTERISTICS
120
DEGRADATION CURVE
IF = 100mA IF = 50mA IF = 20mA
100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
100
RELATIVE POWER OUTPUT (%) 104 105
110
80
60
90
40
80
TCASE = 25°C NO PRE BURN-IN PERFORMED
20
70
101
102
103 STRESS TIME, (hrs)
0 –25
–20
–15
–10
–5 0 5 10 BEAM ANGLE, (deg)
15
20
25
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
3
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50
2
1
0
–25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
POWER OUTPUT, P (mW) o
80
100
10
40
20
1
DC PULSE 10 s, 100Hz
0 750
800
850 900 WAVELENGTH, (nm)
950
1,000
1 0.1 10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com
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