OD-880FJ

HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880FJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available .041 .183 .186 .152 .154 .017 .100 • No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .030 .040 .197 .205 CATHODE .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10µA VR = 0V MIN 6 TYP 8 880 80 8 1.55 5 30 17 0.5 0.5 1.9 MAX UNITS mW nm nm Deg Volts Volts pF µsec µsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 190mW 100mA 3A 5V 240°C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C Peak Forward Current (10µs, 400Hz)2 THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65°C TO 150°C 150°C 370°C/W Typical 120°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C OPTO DIODE CORP. 750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 2 HI-REL GaAlAs IR EMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 100 125 AMBIENT TEMPERATURE (°C) 150 NO HEAT SINK INFINITE HEAT SINK OD-880FJ 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10µs 1 t = 100µs t = 500µs MAXIMUM R AT ING S 0.1 t Ip T D= t T 0.01 0.01 0.1 1 DUTY CYCLE, D (%) 10 100 T Y P IC AL C HAR AC T E R IS T IC S 100 RELATIVE POWER OUTPUT (%) DEGRADATION CURVE IF = 20mA 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 IF = 100mA 70 TCASE = 25°C UNITS PRE CONDITIONED AT IF = 80mA, t = 168 HOURS 60 40 60 20 50 101 102 103 STRESS TIME, (hrs) 104 105 0 –25 –20 –15 –10 5 10 –5 0 BEAM ANGLE, θ(deg) 15 20 25 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) 3 RELATIVE POWER OUTPUT 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 2 1 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 0.5 –50 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10µs, 100Hz 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 OPTO DIODE CORP. 750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2