OD-880L

HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power density 1.00 MIN. GLASS DOME .015 ANODE (CASE) .209 .220 .183 .152 .186 .156 .017 .024 .043 .143 .150 .100 .041 CATHODE .036 45° All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 18 TYP 20 50 80 35 30 17 MAX UNITS mW/sr nm nm mW Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Radiant Intensity, Ie 880 Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts pF sec sec Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWER GaAlAs IR EMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK OD-880L 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10 s t = 100 s t = 500 s 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 20mA RELATIVE POWER OUTPUT (%) 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 60 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 40 60 IF = 100mA 104 105 20 50 101 102 103 STRESS TIME, (hrs) 0 –50 –40 –30 –20 –10 0 10 20 BEAM ANGLE, (deg) 30 40 50 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50 2 1 0 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com