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OD-880LHT

OD-880LHT

  • 厂商:

    OPTODIODE

  • 封装:

    TO-46-2

  • 描述:

    EMITTER IR 880NM 100MA TO-46

  • 详情介绍
  • 数据手册
  • 价格&库存
OD-880LHT 数据手册
HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LHT ANODE (CASE) .015 • Extended operating temperature range • No internal coatings .209 .220 • No derating or heat sink required to 80°C .183 .152 .186 .156 .100 .041 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .024 .043 .036 CATHODE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po R 20 45° MB E .143 .150 13 .017 TEST CONDITIONS IF = 100mA Peak Emission Wavelength, λP MIN 6 TYP 8.5 MAX 880 IF = 50mA Spectral Bandwidth at 50%, Δλ CE Half Intensity Beam Angle, θ IF = 100mA Forward Voltage, VF Reverse Breakdown Voltage, VR 5 VR = 0V DE Capacitance, C IR = 10μA Rise Time nm 80 nm 35 Deg 1.55 30 1.9 Volts Volts 17 pF 0.5 μsec 0.5 μsec E Fall Time UNITS mW Power Dissipation1 LI F ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 190mW Continuous Forward Current 100mA 3A Reverse Voltage 5V OF Peak Forward Current (10μs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -65°C TO 150°C Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 150°C 370°C/W Typical 120°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013 HIGH TEMPERATURE GaAlAs IR EMITTERS 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 50 75 100 125 AMBIENT TEMPERATURE (°C) t = 500μs 150 T IF = 50mA 80 70 TCASE = 25°C NO PRE BURN-IN PERFORMED RELATIVE POWER OUTPUT FE 2 1 100 40 20 0 –50 105 DE 104 LI FORWARD CURRENT, IF (amps) 3 10 60 –40 –30 –20 –10 0 10 20 BEAM ANGLE, θ(deg) 30 40 50 POWER OUTPUT vs TEMPERATURE FORWARD I-V CHARACTERISTICS 4 1 DUTY CYCLE, D (%) 80 CE IF = 100mA 50 103 STRESS TIME, (hrs) 0.1 RADIATION PATTERN 90 102 t T Ip 100 IF = 20mA 101 D= t 0.1 DEGRADATION CURVE 60 t = 100μs 1 MB ER 100 25 t = 10μs 0.01 0.01 RELATIVE POWER OUTPUT (%) 0 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 MAXIMUM PEAK PULSE CURRENT 13 THERMAL DERATING CURVE 20 200 OD-880LHT 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 75 100 1,000 D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) POWER OUTPUT vs FORWARD CURRENT SPECTRAL OUTPUT 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com Revision February 26, 2013
OD-880LHT
PDF文档中的物料型号为:ATMEL-MEGA128-16AU。

器件简介指出这是一款基于增强的AVR RISC结构的低功耗CMOS 8位微控制器。

引脚分配部分列出了该器件的44个引脚及其功能。

参数特性包括工作电压(1.8V-5.5V)、工作温度(-40℃至+85℃)、封装形式(TQFP44)等。

功能详解说明了该微控制器包含的CPU、存储器、I/O端口、定时器、中断系统等特性。

应用信息表明该微控制器适用于工业控制、通信、消费电子等领域。

封装信息显示该器件采用44引脚的薄型四方扁平封装(TQFP)。
OD-880LHT 价格&库存

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