HIGH TEMPERATURE GaAlAs IR EMITTERS
FEATURES
1.00
MIN.
GLASS
DOME
OD-880LHT
ANODE
(CASE)
.015
• Extended operating temperature range
• No internal coatings
.209
.220
• No derating or heat sink required to 80°C
.183 .152
.186 .156
.100
.041
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
.024
.043
.036
CATHODE
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
R
20
45°
MB
E
.143
.150
13
.017
TEST CONDITIONS
IF = 100mA
Peak Emission Wavelength, λP
MIN
6
TYP
8.5
MAX
880
IF = 50mA
Spectral Bandwidth at 50%, Δλ
CE
Half Intensity Beam Angle, θ
IF = 100mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
5
VR = 0V
DE
Capacitance, C
IR = 10μA
Rise Time
nm
80
nm
35
Deg
1.55
30
1.9
Volts
Volts
17
pF
0.5
μsec
0.5
μsec
E
Fall Time
UNITS
mW
Power Dissipation1
LI
F
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
190mW
Continuous Forward Current
100mA
3A
Reverse Voltage
5V
OF
Peak Forward Current (10μs, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
EN
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C TO 150°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
150°C
370°C/W Typical
120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
HIGH TEMPERATURE GaAlAs IR EMITTERS
10
PEAK FORWARD CURRENT, Ip (amps)
POWER DISSIPATION (mW)
INFINITE
HEAT SINK
160
140
NO
HEAT SINK
120
100
80
60
40
20
50
75
100
125
AMBIENT TEMPERATURE (°C)
t = 500μs
150
T
IF = 50mA
80
70
TCASE = 25°C
NO PRE BURN-IN PERFORMED
RELATIVE POWER OUTPUT
FE
2
1
100
40
20
0
–50
105
DE
104
LI
FORWARD CURRENT, IF (amps)
3
10
60
–40
–30
–20
–10
0
10
20
BEAM ANGLE, θ(deg)
30
40
50
POWER OUTPUT vs TEMPERATURE
FORWARD I-V CHARACTERISTICS
4
1
DUTY CYCLE, D (%)
80
CE
IF = 100mA
50
103
STRESS TIME, (hrs)
0.1
RADIATION PATTERN
90
102
t
T
Ip
100
IF = 20mA
101
D=
t
0.1
DEGRADATION CURVE
60
t = 100μs
1
MB
ER
100
25
t = 10μs
0.01
0.01
RELATIVE POWER OUTPUT (%)
0
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
180
MAXIMUM PEAK PULSE CURRENT
13
THERMAL DERATING CURVE
20
200
OD-880LHT
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
OF
0.6
0.5
–50
0
0
1
2
3
4
FORWARD VOLTAGE, VF (volts)
5
6
75
100
1,000
D
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
0
25
50
AMBIENT TEMPERATURE (°C)
POWER OUTPUT vs FORWARD CURRENT
SPECTRAL OUTPUT
100
EN
–25
60
40
100
10
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
DC
PULSE
10μs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
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