ODD-12WB

From Deep UV to Mid-IR ODD-12WB Photodiode 12 mm2 An ITW Company FEATURES • TO-8 Hermetic Package • Circular Active Area • Low Capacitance Electro-Optical Characteristics at 25°C Parameters Test Conditions Active Area 4 mm Dia. Responsivity @ 450 nm Dark Current, Idr VR = 10 V Reverse Breakdown Voltage, VR IR = 10 µA Capacitance, C Rise Time Series Resistance Min 0.2 Typ Units 12 mm2 0.28 A/W 3 25 Max 7 nA 60 Volts VR = 10 V 25 pF VR = 10 V 15 nsec Vf = 1 V 35 100 Ohms Thermal Parameters Units Parameters Storage and Operating Temperature Range Maximum Junction Temperature 1 Lead Soldering Temperature 1 -55°C to 100°C 100°C 260°C 1/16" from case for 10 seconds. Revision January 27, 2022 Page 1 of 3 From Deep UV to Mid-IR ODD-12WB Photodiode 12 mm2 An ITW Company RELATIVE CAPACITANCE Capacitance vs Bias Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 BIAS VOLTAGE (V) 300 400 500 14 16 18 20 900 1000 1100 1200 Typical Spectral Response 0.7 RESPONSIVITY 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 600 700 800 WAVELENGTH (nm) RELATIVE DARK CURRENT (ld) Dark Current vs Voltage Revision January 27, 2022 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE (Vr) 40 45 50 55 60 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 12 mm2 ODD-12WB Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision January 27, 2022 Page 3 of 3