From Deep UV to Mid-IR
ODD-15WB
Photodiode 15 mm2
An ITW Company
FEATURES
• TO-5 Hermetic Package
• Optimized Die Size for Maximum Signal
• Low Capacitance
Electro-Optical Characteristics at 25°C
Parameters
Test Conditions
Active Area
6.27 mm x 2.52 mm
Responsivity
@ 450 nm
Dark Current, Idr
VR = 10 V
Reverse Breakdown Voltage, VR
IR = 10 µA
Capacitance, C
Rise Time
Series Resistance
Min
0.2
Typ
Units
15.8
mm2
0.28
A/W
4
25
Max
10
nA
60
Volts
VR = 10 V
30
pF
VR = 10 V
20
nsec
Vf = 1 V
35
100
Ohms
Thermal Parameters
Units
Parameters
Storage and Operating Temperature Range
Maximum Junction Temperature
1
Lead Soldering Temperature
1
-55°C to 100°C
100°C
260°C
1/16" from case for 10 seconds.
Revision January 27, 2022
Page 1 of 3
From Deep UV to Mid-IR
ODD-15WB
Photodiode 15 mm2
An ITW Company
RELATIVE CAPACITANCE
Capacitance vs Bias Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
10
12
BIAS VOLTAGE (V)
300
400
500
14
16
18
20
900
1000
1100
1200
Typical Spectral Response
0.7
RESPONSIVITY
0.6
0.5
0.4
0.3
0.2
0.1
0.0
200
600
700
800
WAVELENGTH (nm)
RELATIVE DARK CURRENT (ld)
Dark Current vs Voltage
Revision January 27, 2022
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
35
REVERSE VOLTAGE (Vr)
40
45
50
55
60
Page 2 of 3
From Deep UV to Mid-IR
An ITW Company
Photodiode 15 mm2
ODD-15WB
Package Information
Dimensions are in inch [metric] units.
Specifications are subject to change without prior notice.
1260 Calle Suerte, Camarillo, California 93012
Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com
Revision January 27, 2022
Page 3 of 3
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