ODD-1B

From Deep UV to Mid-IR ODD-1B Photodiode 1 mm2 An ITW Company FEATURES • TO-18 Package • Low Cost Format • Low Dark Current • Low Capacitance Electro-Optical Characteristics at 25°C Parameters Test Conditions Active Area 1.35 mm x 0.76 mm Responsivity @ 450 nm Dark Current, Idr VR = 10 V Reverse Breakdown Voltage, VR IR = 10 µA Capacitance, C VR = 10 V 0.5 2 pF Rise Time VR = 10 V 8 15 nsec Vf = 1 V 25 60 Ohms Series Resistance Min 0.2 Typ Units 1 mm2 0.28 A/W 0.2 25 Max 1 nA 60 Volts Thermal Parameters Units Parameters Storage and Operating Temperature Range Maximum Junction Temperature 1 Lead Soldering Temperature 1 -55°C to 100°C 100°C 260°C 1/16" from case for 10 seconds. Revision January 27, 2022 Page 1 of 3 From Deep UV to Mid-IR ODD-1B Photodiode 1 mm2 An ITW Company RELATIVE CAPACITANCE Capacitance vs Bias Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 BIAS VOLTAGE (V) 300 400 500 14 16 18 20 900 1000 1100 1200 Typical Spectral Response 0.7 RESPONSIVITY 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 600 700 800 WAVELENGTH (nm) RELATIVE DARK CURRENT (ld) Dark Current vs Voltage Revision January 27, 2022 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE (Vr) 40 45 50 55 60 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 1 mm2 ODD-1B Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision January 27, 2022 Page 3 of 3