ODD-42W

From Deep UV to Mid-IR ODD-42W Photodiode 42 mm2 An ITW Company FEATURES • TO-8 Hermetic Package • Optimized Die Size for Maximum Signal • Low Capacitance Electro-Optical Characteristics at 25°C Parameters Test Conditions Active Area 9.91 mm x 4.28 mm Responsivity @ 632 nm Dark Current, Idr VR = 10 V Reverse Breakdown Voltage, VR IR = 10 µA Capacitance, C Rise Time Series Resistance Min 0.35 Typ Units 42 mm2 0.4 A/W 11 25 Max 25 nA 60 Volts VR = 10 V 85 pF VR = 10 V 30 nsec Vf = 1 V 35 100 Ohms Thermal Parameters Units Parameters Storage and Operating Temperature Range Maximum Junction Temperature 1 Lead Soldering Temperature 1 -55°C to 100°C 100°C 260°C 1/16" from case for 10 seconds. Revision January 27, 2022 Page 1 of 3 From Deep UV to Mid-IR ODD-42W Photodiode 42 mm2 An ITW Company RELATIVE CAPACITANCE Capacitance vs Bias Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 BIAS VOLTAGE (V) 14 16 18 20 Typical Spectral Response 0.7 RESPONSIVITY 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 400 500 600 700 800 900 WAVELENGTH (nm) 1000 1100 RELATIVE DARK CURRENT (ld) Dark Current vs Voltage Revision January 27, 2022 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE (Vr) 40 45 50 55 60 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 42 mm2 ODD-42W Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision January 27, 2022 Page 3 of 3