SXUV100

From Deep UV to Mid-IR SXUV100 Photodiode 100 mm2 An ITW Company FEATURES • Single Active Area • Detection to 1 nm • Stable Response after Exposure to EUV/UV Conditions • Protective Cover Plate2 Electro-Optical Characteristics at 25 °C Parameters Test Conditions Active Area 10 mm x 10 mm Responsivity (see graph on next page) Shunt Resistance, Rsh Reverse Breakdown Voltage, VR Capacitance, C Typ Max Units mm2 100 A/W @ ± 10 mV 10 MOhms IR = µA 10 Volts VR = 0 V Response Time, tr Min RL = 50 Ω, VR = 8 V 5 15 nF 6 µ sec Thermal Parameters Units Storage and Operating Temperature Range Ambient -10 ° to 40 °C Nitrogen or Vacuum -20 °C to 80 °C 1 Lead Soldering Temperature 260 °C 1 0.080" from case for 10 seconds. 2 Shipped with temporary cover to protect the photodiode and wire bonds. Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover. Revision November 26, 2019 Page 1 of 3 From Deep UV to Mid-IR SXUV100 Photodiode 100 mm2 An ITW Company Typical Photon Responsivity 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 Wavelength (nm) 1000 Capacitance vs. Voltage 4000 CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 0 5 10 VOLTAGE (V) 15 20 25 Dark Current vs. Voltage DARK CURRENT (nA) 35 30 25 20 15 10 5 0 Revision November 26, 2019 0 5 10 15 20 25 VOLTAGE (V) 30 35 40 45 50 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 100 mm2 SXUV100 Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 3 of 3