SXUV20HS1

From Deep UV to Mid-IR An ITW Company SXUV20HS1 Photodiode Φ5 mm FEATURES • Circular Active Area • • • • Ideal for EUV Detection High Speed Grid lines 5 microns, Pitch 100 microns Superior Radiation Hardness • High Photon Flux Robustness • TO-8 package • Protective Cover Plate3 Electro-Optical Characteristics at 25 °C Parameters Test Conditions Active Area Φ5.01 mm Responsivity (see graph on next page) Reverse Breakdown Voltage, VR IR = 1 µA Capacitance, C VR = 0 V Rise Time Min Typ Max Units mm2 20 A/W 160 Volts 1500 pF RL = 50 Ω, VR = 150 V 3.5 nsec VR = 150 V 100 nA Dark Current 500 Thermal Parameters Units Storage and Operating Temperature Range Ambient1 Nitrogen or Vacuum Lead Soldering Temperature2 -10 ° to 40 °C -20 °C to 80 °C 260 °C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080" from case for 10 seconds. 3 Shipped with temporary cover to protect the photodiode array and wire bonds. Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover. Revision October 17, 2019 Page 1 of 3 From Deep UV to Mid-IR SXUV20HS1 Photodiode Φ5 mm An ITW Company Typical Photon Responsivity 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 Wavelength (nm) 1000 Capacitance vs. Voltage 500 CAPACITANCE (pF) 450 400 350 300 250 200 150 100 50 0 0 5 10 VOLTAGE (V) 15 20 25 Dark Current vs. Voltage DARK CURRENT (nA) 12 10 8 6 4 2 0 Revision October 17, 2019 0 20 40 60 80 VOLTAGE (V) 100 120 140 160 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode Φ5 mm SXUV20HS1 Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision October 17, 2019 Page 3 of 3