SXUV300C

From Deep UV to Mid-IR SXUV300C Photodiode 331 mm2 An ITW Company FEATURES • Rectangular Active Area • Excellent Stability after EUV Exposure • Windowless Package for Responsivity to 1 nm • Ceramic Package Electro-Optical Characteristics at 25 °C Parameters Test Conditions Active Area 22.05 mm x 15.85 mm Responsivity See attached graph Shunt Resistance Min Typ Units mm2 331 A/W @ ± 10 mV 5 Reverse Breakdown Voltage, VR IR = 1 µA 20 Capacitance, C VR = 0 V 25 RL = 50 Ω, VR = 0 V 15 Response Time, tr Max MOhms 25 Volts 40 nF usec Thermal Parameters Storage and Operating Temperature Range Ambient -10 ° to 40 °C Nitrogen or Vacuum -20 ° to 80 °C 1 Lead Soldering Temperature 1 Units N/A Soldering not recommended. Use with AXUV300CTS socket or equivalent. Revision May 31, 2020 Page 1 of 3 From Deep UV to Mid-IR SXUV300C Photodiode 331 mm2 An ITW Company Typical Photon Responsivity 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 Wavelength (nm) 1000 Capacitance vs. Voltage CAPACITANCE (nF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VOLTAGE (V) 25 30 35 40 Dark Current vs. Voltage DARK CURRENT (nA) 600 500 400 300 200 100 0 Revision May 31, 2020 0 5 10 VOLTAGE (V) 15 20 25 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 331 mm2 SXUV300C Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision May 31, 2020 Page 3 of 3