SXUVPS4

From Deep UV to Mid-IR SXUVPS4 Quadrant Photodiode 5 mm2 An ITW Company FEATURES • Circular Active Area (4 Quadrants) • TO-5, 5 Pin Package Electro-Optical Characteristics at 25°C (Per Element) Parameters Test Conditions Active Area R.049 [1.25 mm] Responsivity (see graph on next page) Shunt Resistance, Rsh Min Typ Max Units mm2 1.25 @ ± 10 mV 100 MOhms Reverse Breakdown Voltage, VR IR = 1 µA 20 Volts Capacitance, C VR = 0 V Response Time, tr RL = 500 Ω, VR = 0 V 500 pF 1 µsec Thermal Parameters Storage and Operating Temperature Range Ambient -10°C to 40°C Nitrogen or Vacuum -20°C to 80°C 1 Lead Soldering Temperature 1 Units 260°C 0.08" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode, “Handling Precautions for IRD Detectors”, prior to removing cover. Revision November 26, 2019 Page 1 of 2 From Deep UV to Mid-IR SXUVPS4 Quadrant Photodiode 5 mm2 An ITW Company Typical Photon Responsivity 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 Wavelength (nm) 100 1000 Package Information Dimensions are in inches [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 2 of 2