SXUVPS4C

From Deep UV to Mid-IR SXUVPS4C Quadrant Photodiode 5 mm2 An ITW Company FEATURES • TO-5, 5 Pin Package • Windowless Package Electro-Optical Characteristics at 25°C (Per Element) Parameters Test Conditions Min Typ Active Area Per Quadrant 1.25 mm2 Responsivity @ 254 nm 0.02 A/W Dark Current, Idr VR = ± 18 V 1 Reverse Breakdown Voltage, VR IR = 1 µA Capacitance, C VR = 0 V 100 Response Time, tr VR = 0 V 1 Shunt Resistance Vf = ± 10 mV Max Units 100 nA 20 Volts 300 pF µsec 100 MOhms Thermal Parameters Storage and Operating Temperature Range Ambient -10°C to 40°C Nitrogen or Vacuum -20°C to 80°C 1 Lead Soldering Temperature 1 Units 260°C 0.08" from case for 10 seconds. Revision November 26, 2019 Page 1 of 3 From Deep UV to Mid-IR SXUVPS4C Quadrant Photodiode 5 mm2 An ITW Company Typical Photon Responsivity 0.35 Responsivity (A/W) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 Wavelength (nm) 1000 Capacitance vs. Voltage 90 CAPACITANCE (pF) 80 70 60 50 40 30 20 10 0 0 5 10 5 10 VOLTAGE (V) 15 20 25 15 20 25 Dark Current vs. Voltage DARK CURRENT (nA) 70 60 50 40 30 20 10 0 Revision November 26, 2019 0 VOLTAGE (V) Page 2 of 3 From Deep UV to Mid-IR An ITW Company Quadrant Photodiode 5 mm2 SXUVPS4C Package Information Dimensions are in inches [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 3 of 3