UVG12

From Deep UV to Mid-IR UVG12 Photodiode 13 mm2 An ITW Company FEATURES • Circular Active Area • • • • Ideal for 193-400 nm Detection 100 % Internal QE No Cap for Maximum Responsivity Sacrificial Cap Taped on for Shipping Purposes Electro-Optical Characteristics at 25 °C Parameters Test Conditions Active Area Φ 4.1 mm Responsivity @ 254 nm 0.105 0.115 VF = ±10 mV 100 1000 Reverse Breakdown Voltage, VR IR = 1 µA 10 Capacitance, C VR = 0 V Response Time VR = 0 V Shunt Resistance Min Typ Max Units mm2 13.2 0.125 A/W Mohms Volts 3 7 nF 4 µsec Thermal Parameters Units Storage and Operating Temperature Range Storage Temperature Range -20°C to 80°C Operating Temperature Range 1 Lead Soldering Temperature 1 80°C 240°C 0.0625" from case for 10 seconds. Shipped with temporary cover to protect the photodiode and wire bonds. Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover. Revision November 26, 2019 Page 1 of 2 From Deep UV to Mid-IR An ITW Company UVG12 Photodiode 13 mm2 Typical Photon Responsivity Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 2 of 2