UVG20S

From Deep UV to Mid-IR UVG20S Photodiode 24 mm2 An ITW Company FEATURES • Circular Active Area • Ideal for 190-400 nm Detection • 100% Internal QE • UV Quartz Window Epoxy Bonded in Place Electro-Optical Characteristics at 25 °C Parameters Test Conditions Active Area Φ 5.5 mm Responsivity @ 254 nm Min Typ Max Units 24 mm2 0.105 0.115 A/W VF = ± 10 mV 50 100 MOhms Reverse Breakdown Voltage, VR IR = 1 µA 10 50 Volts Capacitance, C VR = 0 V Response Time VR = 0 V Shunt Resistance 1.5 5 nF 4 µ sec Thermal Parameters Storage and Operating Temperature Range Storage Temperature Range 1 Lead Soldering Temperature 1 Units -20° to 80°C 260°C 0.0625" from case for 10 seconds. Revision November 26, 2019 Page 1 of 3 From Deep UV to Mid-IR UVG20S Photodiode 24 mm2 An ITW Company Typical Photon Responsivity Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Capacitance vs. Voltage 1600 CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0 10 20 30 40 VOLTAGE (V) 50 60 70 80 Dark Current vs. Voltage DARK CURRENT (nA) 2.5 2.0 1.5 1.0 0.5 0.0 Revision November 26, 2019 0 5 10 VOLTAGE (V) 15 20 25 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 24 mm2 UVG20S Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 3 of 3