UVG5S

From Deep UV to Mid-IR UVG5S Photodiode 5 mm2 An ITW Company FEATURES • Circular Active Area • Ideal for 225-400 nm Detection • 100% Internal QE • Welded Cap with UV Glass Window Electro-Optical Characteristics at 25°C Parameters Test Conditions Active Area Φ 2.5 mm Responsivity @ 254 nm, VR = 0 V Min 0.09 Typ Max Units 5 mm2 0.115 A/W Dark Current, Idr VR = 6 V 1 Reverse Breakdown Voltage, VR IR = 1 µA Capacitance, C VR = 0 V 500 1500 pF Response Time VR = 0 V 1 2 µsec 25 nA 50 Volts Thermal Parameters Storage and Operating Temperature Range Storage Temperature Range 1 Lead Soldering Temperature 1 Units -20°C to 80°C 240°C 0.0625" from case for 10 seconds. Revision November 26, 2019 Page 1 of 3 From Deep UV to Mid-IR UVG5S Photodiode 5 mm2 An ITW Company Typical Photon Responsivity Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Capacitance vs. Voltage 450 CAPACITANCE (pF) 400 350 300 250 200 150 100 50 0 0 10 20 30 40 VOLTAGE (V) 50 60 70 80 Dark Current vs. Voltage DARK CURRENT (nA) 35 30 25 20 15 10 5 0 Revision November 26, 2019 0 10 20 30 VOLTAGE (V) 40 50 60 Page 2 of 3 From Deep UV to Mid-IR An ITW Company Photodiode 5 mm2 UVG5S Package Information Dimensions are in inch [metric] units. Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision November 26, 2019 Page 3 of 3