ST3215SB32768C0HSZA1

Specifications Drawing No. USY1N-H1-14429-00 1 / 9 Issued Date. Dec,3,2014 Messrs: Digi-Key Note: Part Number will be revised in case of specification change. Product Type Tuning Fork Crystal Series ST3215SB Frequency 32.768 kHz Customer Part Number - Customer Specification Number - ST3215SB32768H5HSZA1(CL=12.5pF) ST3215SB32768E0HSZB1(CL=9.0pF) KYOCERA Part Number ST3215SB32768C0HSZA1(CL=7.0pF) ST3215SB32768B0HSZA1(CL=6.0pF) Remarks Pb-Free, RoHS Compliant, MSL 1 AEC Q200 conformity. Customer Approval Approval Signature Approved Date Department Person in charge Seller KYOCERA Crystal Device Corporation Manufacturer KYOCERA Crystal Device Corporation (Crystal Units Division) (Sales Division) 6 Takeda Tobadono-cho, Fushimi-ku, Kyoto 612-8501 Japan TEL. No. 075-604-3500 FAX. No. 075-604-3501 Design Department KYOCERA Crystal Device Corporation Crystal Unit Application Engineering Section 5850, Higashine-Koh, Higashine-Shi, Yamagata 999-3701 Japan TEL. No. 0237-43-5611 FAX. No. 0237-43-5615 Quality Assurance F.Mukae Approved by T.Soda Checked by A.Muraoka Issued by Y.Nozaki Crystal Units Division KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 2/9 Revision History Rev.No. 0 Description of revision First Edition Date Approved by Checked by Issued by Dec,3,2014 T.Soda A.Muraoka Y.Nozaki KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 3/9 1. APPLICATION This specification sheet is applied to tuning fork crystal “ST3215SB” for Automotive(Non-Safety Application). 2. PART NUMBER ST3215SB32768H5HSZA1(CL=12.5pF) ST3215SB32768E0HSZB1(CL=9.0pF) ST3215SB32768C0HSZA1(CL=7.0pF) ST3215SB32768B0HSZA1(CL=6.0pF) 3. RATINGS Items SYMB. Rating Unit Operating Temperature range Topr -40~+125 deg. C Storage Temperature range Tstg -55~+125 deg. C 4. CHARACTERISTICS 4-1 ELECTRICAL CHARACTERISTICS Electrical Specification Item Symbol Nominal Frequency fo Ta = 25 deg. C Frequency Tolerance df/fo Ta = 25 deg.C Condition Min Typ. Max Unit 20 ppm 32.768 -20 kHz 12.5 9.0 Load Capacitance CL Equivalent series resistance R1 Q-Value Q 13000 Motional capacitance C1 Shunt capacitance Turning point pF 7.0 6.0 Secondary temperature Coefficient 70 kΩ 3.0 4.4 fF Co 0.6 1.2 pF Tp 20 30 deg. C K -4.0 Aging df/F Drive level DL Insulation resistance (between electrodes) Ta = 25 deg. C -8 -3 0.1 IR 500 2 10 /degC 3 ppm/year 0.5 µW MΩ 4-2 MOISTURE SENSITIVITY LEVEL Level 1 KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 4/9 5. APPEARANCES, DIMENSIONS OUTLINE DIMENSIONS (not to scale) (TOP VIEW) CONNECTION (TOP VIEW) 1.5± 0.1 3.2±0.10 4-(0.25) (1) (2) 0.8± 0.1 K925AA (3) (4) (Side View) (Bottom View ) 6-(0.1) C0.25 4-(R0.15) UNIT : mm 1.70 MARKING (1) Identification K (2) Date Code(3 Digits) Last 1 digit of year and week Code. (3) Load Capacitance (4) Management number (Example) 12.5pF  A 9.0pF B 7.0pF  C 6.0pF  F Alphabet or Number 1digit. *The font of marking above is for reference purpose. 1.0 1.6 1.0 1.55 6. RECOMMENDED LAND PATTERN 3.6 KYOCERA Crystal Device Corporation UNIT : mm KBS-5079F Drawing No. USY1N-H1-14429-00 5/9 7. TAPING 7.1 Specification 1. Material of the carrier tape is either polystyrene or A-PET (ESD). 2. Material of the cover tape is polyester (ESD). 3. The seal tape shall not cover the sprocket holes and not protrude from the carrier tape. 4. The R of the corner of each cavity is 0.2R MAX. 5. The alignment between centers of the cavities and sprocket holes is 0.05mm or less. 6. The orientation shall be checked from the top cover tape side. 7. Peeling force of the cover tape: 0.1 to 0.7N. Leader and ending tape SMD parts taped area Empty compartment Empty compartment 100mm min. sealed with top cover tape END Top cover tape only START 160mm min. 350mm min. Leader Ending Direction (View from cover tape) K925AA K925AA K925AA K925AA Feeding direction Tensile strength Peeling strength Cover tape Bending radius (50mm) 165 to 180˚ Feeding direction Enboss tape KYOCERA Crystal Device Corporation KBS-5079F Drawing No. 7-2 Carrier tape specifications USY1N-H1-14429-00 6/9 (Unit: mm) B H C J E G F A L Symbol Dimension A B 2.0±0.1 4.0±0.1 G H 12.0±0.3 1.0+0.1/-0 Symbol Dimension 7-3 Reel specifications N T D C D E F 4.0±0.1 5.5±0.1 1.75±0.1 J L N T 3.6±0.1 1.8±0.1 1.0±0.1 0.3±0.05 1.5+0.1/-0 (Unit: mm) W R S U Q P In the case of φ180 Reel Symbol P φ180 +0/-1.5 Dimension Symbol S φ21±0.8 Dimension Q φ60 +1.0/-0 U 2.0±0.5 R φ13±0.2 W 13.0 +1.0/-0 KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 7/9 8. RELIABILITY (Reference: AEC-Q200 Rev. D. The solder used by examination is hereafter set to Sn-3Ag-0.5Cu.) Frequency Stability and ESR Stability After stressing. No 8.1 Stress Reference Additional Requirements High Temperature Exposure MIL-STD-202 1000 hrs. at rated operating temperature (e.g. 85°C part can be stored for 1000 hrs (Storage) at 85°C. Same applies for 125°C). Unpowered. Method 108 Measurement at 24±4 hours after test conclusion. 8.2 Temperature Cycling JESD22 1000 cycles (-55°C to 125°C) Note: If -40°C , 85°C part the 1000 cycles will be at Method JA-104 that temperature rating. Measurement at 24±4 hours after test conclusion. 30min maximum dwell time at each temperature extreme. 1 min. maximum transition time. 8.3 Biased Humidity MIL-STD- 202 1000 hours 85°C/85%RH. Rated VDD applied with 1 MW and inverter in parallel, Method 103 2X crystal CL capacitors between each crystal leg and GND. Measurement at 24±4 hours after test conclusion. 8.4 Operational Life MIL-STD- 202 Note: 1000 hrs @ 125°C. If 85°C part will be tested at that temperature. Rated Method 108 VDD applied with 1 MW and inverter in parallel, 2X crystal CL capacitors between each crystal leg and GND. Measurement at 24±4 hours after test conclusion. 8.5 Terminal Strength (Leaded) 8.6 Resistance to Solvents 8.7 Mechanical Shock MIL-STD- 202 Test leaded device lead integrity only. Conditions: A Method 211 (227 g), C (227 g). MIL-STD- 202 Note: Also aqueous wash chemical - OKEM clean or equivalent. Do not use Method 215 banned solvents. MIL-STD-202 Figure 1 of Method 213. Condition C Method 213 8.8 Vibration MIL-STD-202 5g's for 20 minutes 12 cycles each of 3 orientations. Method 204 Note: Use 8"X5" PCB .031" thick with 7 secure points on one 8" side and 2 secure points on corners of opposite sides. Parts mounted within 2" from any secure point. Test from 10-2000 Hz. 8.9 Resistance to MIL-STD-202 Condition B No pre-heat of samples. Note: Single Wave solder - Procedure 1 with Soldering Heat Method 210 solder within 1.5 mm of device body for Leaded. Procedure 1 except 230°C and immerse only to level to cover terminals for SMD. 8.10 Solderability J-STD-002 For both Leaded & SMD. Electrical Test not required. Magnification 50 X. Conditions: Leaded: Method A @ 235°C, category 3. SMD: a) Method B, 4 hrs @ 155°C dry heat @ 235°C b) Method B @ 215°C category 3. c) Method D category 3 @ 260°C. 8.11 Flammability UL-94 V-0 or V-1 Acceptable 8.12 Board Flex AEC Q200-005 60 sec minimum holding time. 8.13 Terminal Strength(SMD) AEC Q200-006 The static load of 1.8Kg is added in the direction of the arrow and it maintains it in the prime fields of parts for 60 sec with a scratch treatment device of R0.5. KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 8/9 9. REFLOW PROFILE Pb-free reflow requirements for soldering heat resistance KYOCERA Crystal Device Corporation KBS-5079F Drawing No. USY1N-H1-14429-00 9/9 10. Cautions for use (1) Soldering upon mounting Characteristics may be affected when Solder paste or conductive glue comes in contact with product lid or surface. (2) When using mounting machine Please minimize the shock when using mounting machine to avoid any excess stress to the product. (3) Conformity of a circuit We strongly recommend to make sure that Negative resistance (Gain) of IC is designed to be 3 times the ESR (Equivalent Series Resistance) of Crystal unit. 11. Storage conditions Please store product in below conditions, and use within 6 months. Temperature +18 to +30°C, and Humidity of 20 to 70 % in the packaging condition. 12. Manufacturing location Kyocera Crystal Device Corporation Shiga Yohkaichi Plant 13. Quality Assurance To be guaranteed by Kyocera Crystal Device Quality Assurance Division 14. Quality guarantee When Kyocera Crystal Device Corporation rooted failure occurs within 1 year after its delivery, substitute product will be arranged based on discussion. Quality guarantee of product after 1year of its delivery will be waivered. 15. Others In case of any questions or opinions regarding the Specification, please have it in written manner within 45 days after issued date. KYOCERA Crystal Device Corporation KBS-5079F