105207

RED 1. 2. 2.1 2.2 Item No.: 105207 This specification applies to GaAsP / GaAs LED Chips Structure Planar structure Electrodes p-side (anode) n-side (cathode) Al Au alloy 3. Outlines (dimensions in microns) p-Diffusion p-Electrode 1210 Isolator n-Epitaxy GaAsP 300 n-Substrate GaAs n-Electrode 1010 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min 5 150 typ 1,65 200 660 max 1,84 Unit V V cd nm Forward voltage VF I F = 7 mA Reverse voltage VR IR = 10 A Luminous intensity IV I F = 7 mA Peak wavelength I F = 7 mA λP Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with wire bond side on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com