115161L

INFRA-RED 1. 2. 2.1 2.2 Item No.: 115161 L This specification applies to GaAlAs / GaAlAs Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 325 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse voltage output Power * Switching time Symbol VF VR Φe tr, tf Conditions IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA min 5 1,3 typ 1,90 1,6 40 670 max 2,30 Unit V V mW ns nm Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com