115261L

RED 1. 2. 2.1 2.2 Item No.: 115261 L This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-Epitaxy GaAlAs 325 125 180 Active Layer n-Epitaxy GaAlAs n-Electrode 325 Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse current Luminous intensity Luminous intensity Output power Symbol VF IR IV IV Φe Conditions IF = 20 mA VR = 5 V IF = 10 mA IF = 20 mA IF = 20 mA min typ 1,85 max 2,20 10 Unit V µA mcd mcd mW nm 8,0 16,0 1,3 11,0 22,0 1,6 670 Peak wavelength IF = 20 mA λP power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire-bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com