120134

INFRA-RED 1. 2. 2.1 2.2 Item No.: 120134 This specification applies to GaAs / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Substrate GaAs 365 120 280 n-Epitaxy GaAs p-Epitaxy GaAs 365 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) p-Electrode Parameter Forward voltage Reverse current output Power * Switching time Symbol VF IR Φe tr, tf Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 50 mA IF = 20 mA min typ 1,25 max 1,40 10 Unit V µA mW µs nm 1,0 2,5 1,5 3,5 0,6 Peak wavelength IF = 20 mA 950 λP * On request, wafers will be delivered according to output power classes Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com