126124

INFRA-RED 1. 2. 2.1 2.2 Item No.: 126124 This specification applies to GaAlAs / GaAs Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs Active Layer p-Epitaxy GaAlAs p-Substrate GaAs p-Electrode 365 120 270 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse voltage output Power * Switching time Symbol VF VR Φe tr, tf Conditions IF = 20 mA IR = 5 µA IF = 20 mA IF = 20 mA min typ 1,30 max 1,60 10 Unit V V mW ns nm 0,9 1,2 40 860 Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com