127141D

INFRA-RED 1. 2. 2.1 2.2 Item No.: 127141 D This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy Wire bond contacts can also have a spider shape 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 325 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 325 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse voltage output Power * Peak wavelength Switching time Symbol VF VR Φe λP tr, tf Conditions IF = 20 mA IR = 10 µA IF = 20 mA IF = 20 mA IF = 20 mA min 1,60 5 2,5 719 typ 1,85 3,0 724 40/30 25 max 1,95 4,0 729 29 Unit V V mW nm ns ns ½ band width ∆λ IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com