128144

INFRA-RED 1. 2. 2.1 2.2 Item No.: 128144 This specification applies to GaAlAs / GaAlAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 365 120 330 p-Epitaxy GaAlAs 365 Wire bond contacts can also have a square 4. Electrical and optical characteristics (T=25°C) p-Electrode Parameter Forward voltage Reverse current output Power * Switching time Symbol VF IR Φe tr, tf Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 50 mA IF = 20 mA min typ 1,30 max 1,50 10 Unit V µA mW ns nm 1,3 3,2 1,8 4,5 600 910 Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com