131244

INFRA-RED 1. 2. 2.1 2.2 Item No.: 131244 This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-GaAlAs 365 120 280 typ. p-Epitaxy GaAs n-Epitaxy GaAs n-Substrate GaAs 365 n-Electrode 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse current Symbol VF IR Conditions min typ 1,25 max 1,45 10 Unit V A mW IF = 20 mA IR = 5 V IF = 20 mA output Power * Φe IF = 50 mA Switching time tr, tf IF = 20 mA Peak wavelength IF = 20 mA λP Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max 3,0 7,5 500 950 ns nm Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com