136144

INFRA-RED 1. 2. 2.1 2.2 Item No.: 136144 This specification applies to GaAlAs / GaAlAs Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 365 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse voltage output Power Symbol VF VR Φe Conditions IF = 20 mA IR = 10 µA IF = 20 mA min 5 2,5 typ 1,55 3,4 35 850 max 1,80 Unit V V mW ns nm Switching time tr, tf IF = 20 mA Peak wavelength IF = 20 mA λP Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com