160272

YELLOW-GREEN 1. 2. 2.1 2.2 Item No.: 160272 This specification applies to AlInGaP / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy or Al Au alloy 3. Outlines (dimensions in microns) p-Electrode Epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse current Luminous intensity * Symbol VF IR IV Conditions IF = 20 mA VR = 5 V IF = 10 mA min typ 2,10 26,0 max 2,40 10 Unit V µA mcd nm dom. wavelength λD IF = 20 mA 572 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com