190150

RED 1. 2. 2.1 2.2 Item No.: 190150 This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 265 120 150 Active Layer p-Epitaxy GaAlAs p-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Forward voltage Reverse current Luminous intensity * Switching time Symbol VF IR IV tR tf Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA min typ 1,90 max 2,30 10 Unit V µA mcd ns nm 12 Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity 16 50 35 635 © 2004 OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com