BP104F_01

Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT BP 104 F BP 104 FS BP 104 F BP 104 FS Wesentliche Merkmale • • • • Speziell geeignet für Anwendungen bei 950 nm Kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BP 104 FS: geeignet für Vapor-Phase Löten und IR-Reflow Löten Features • • • • Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern, Gerätefernsteuerungen • Lichtschranken für Gleich- und Wechsellichtbetrieb Typ Type BP 104 F Bestellnummer Ordering Code Q62702-P84 Gehäuse Package Applications • IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment • Photointerrupters DIL-Gehäuse, schwarzes Epoxy-Gießharz, Kathodenkennzeichnung: Fähnchen am Anschluß DIL package, black epoxy resin Cathode marking: flag on lead DIL/SMT-Gehäuse, schwarzes Epoxy-Gießharz, Kathodenkennzeichnung: Langer, breiter Anschluß DIL/SMT package, black epoxy resin Cathode marking: long broad lead BP 104 FS Q62702-P1646 2001-02-21 1 BP 104 F, BP 104 FS Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Symbol Symbol Wert Value 34 (≥ 25) Einheit Unit µA Symbol Symbol Wert Value – 40 … + 100 20 150 Einheit Unit °C V mW Top; Tstg VR Ptot IP λS max λ 950 800 … 1100 nm nm A L×B L×W H ϕ 4.84 2.20 × 2.20 mm2 mm × mm 0.5 0.3 (BP 104 FS) ± 60 2 (≤ 30) 0.70 0.90 mm Grad deg. nA A/W Electrons Photon IR Sλ η 2001-02-21 2 BP 104 F, BP 104 FS Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics (cont’d) Bezeichnung Parameter Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 330 (≥ 250) 17 20 Einheit Unit mV µA ns VO ISC tr, tf VF C0 TCV TCI NEP 1.3 48 – 2.6 0.18 3.6 × 10–14 V pF mV/K %/K W ----------Hz cm × Hz ------------------------W D* 6.1 × 1012 2001-02-21 3 BP 104 F, BP 104 FS Relative Spectral Sensitivity Srel = f (λ) 100 S rel % 80 OHF00368 Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) ΙP 10 3 µA OHF01056 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00958 10 4 mV VO 10 3 10 2 VO 60 10 1 10 2 80 60 40 10 0 ΙP 10 1 40 20 20 0 700 10 -1 800 900 1000 nm λ 1200 10 0 10 1 10 2 µW/cm2 Ee 10 10 4 0 0 0 20 40 60 80 ˚C 100 TA Dark Current Capacitance Dark Current IR = f (VR), E = 0 4000 pA OHFD1781 C = f (VR), f = 1 MHz, E = 0 60 C pF 50 OHF01778 IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 Ι R nA 10 2 ΙR 3000 40 2000 30 10 1 20 1000 10 0 10 0 0 5 10 15 VR V 20 0 -2 10 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2001-02-21 4 BP 104 F, BP 104 FS Maßzeichnung Package Outlines BP 104 F 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.6 (0.024) 4.0 (0.157) 3.7 (0.146) 4.5 (0.177) 4.3 (0.169) 1.2 (0.047) 0.7 (0.028) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0.35 (0.014) 0.2 (0.008) 0.6 (0.024) 0.4 (0.016) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.20 (0.087) x 2.20 (0.087) GEOY6075 BP 104 FS 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.9 (0.035) 0.7 (0.028) 1.6 (0.063) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-21 5 0...5 ˚ 0.2 (0.008) 0.1 (0.004) GEOY6861 3.5 (0.138) 3.0 (0.118) 0.6 (0.024) 0.4 (0.016) 0.5 (0.020) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) Cathode marking 5.4 (0.213) 4.9 (0.193) Chip position BP 104 F, BP 104 FS Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 6