BP104S_01

Silizium-PIN-Fotodiode Silicon PIN Photodiode BP 104 S Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • Geeignet für Vapor-Phase Löten und IR-Reflow-Löten • SMT-fähig Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Fernsteuerungen • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type BP 104 S Bestellnummer Ordering Code Q62702-P1605 Features • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Suitable for SMT Applications • • • • Photointerrupters IR remote controls Industrial electronics For control and drive circuits 2001-02-21 1 BP 104 S Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 … + 85 20 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Fotostrom VR = 5 V Photocurrent Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Symbol Symbol Wert Value 55 (≥ 40) 850 400 … 1100 Einheit Unit nA/lx nm nm IP λS max λ A L×B L×W H ϕ 4.84 2.20 × 2.20 mm2 mm × mm 0.3 ± 60 2 (≤ 30) 0.62 0.90 mm Grad deg. nA A/W Electrons Photon IR Sλ η 2001-02-21 2 BP 104 S Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Leerlaufspannung, EV = 1000 lx Open-circuit voltage Kurzschlußstrom, EV = 1000 lx Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit Symbol Symbol Wert Value 360 (≥ 280) 50 20 Einheit Unit mV µA ns VO ISC tr, tf VF C0 TKV TKI NEP 1.3 48 – 2.6 0.18 3.6 × 10– 14 V pF mV/K %/K W ----------Hz cm × Hz ------------------------W D* 6.1 × 1012 2001-02-21 3 BP 104 S Relative Spectral Sensitivity Srel = f (λ) 100 S rel % 80 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) ΙP 10 3 µA OHF02283 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00958 10 4 mV VO 10 3 10 2 VO 60 10 1 40 ΙP 10 2 80 60 10 0 20 10 1 40 20 0 400 500 600 700 800 900 nm 1100 λ 10 -1 10 0 10 1 10 2 10 0 10 3 lx 10 4 EV 0 0 20 40 60 80 ˚C 100 TA Dark Current IR = f (VR), E = 0 10 2 nA OHF02284 Capacitance Dark Current C = f (VR), f = 1 MHz, E = 0 60 C pF 50 OHF01778 IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 ΙR Ι R nA 10 2 10 1 40 30 10 1 10 0 20 10 0 10 10 -1 0 2 4 6 8 10 12 14 16 V 20 VR 0 -2 10 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Srel = f (ϕ) Birectional Characteristics 40 30 20 10 0 1.0 OHF01402 ϕ 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2001-02-21 4 BP 104 S Maßzeichnung Package Outlines 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.9 (0.035) 0.7 (0.028) 1.6 (0.063) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) GEOY6861 Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 5 ˚ 0.2 (0.008) 0.1 (0.004) 0...5