BPW34BS

Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit (typ. 25 ns) • DIL-Plastikbauform mit hoher Packungsdichte Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb im sichtbaren Lichtbereich • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type BPW 34 B BPW 34 BS Bestellnummer Ordering Code Q62702-P945 Q62702-P1601 Features • Especially suitable for applications from 350 nm to 1100 nm • Short switching time (typ. 25 ns) • DIL plastic package with high packing density Applications • Photointerrupters • Industrial electronics • For control and drive circuits 2002-01-24 1 BPW 34 B, BPW 34 BS Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 … + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Symbol Symbol Wert Value 75 850 350 … 1100 Einheit Unit nA/Ix nm nm S λS max λ A 7.45 2.73 × 2.73 ± 60 2 (≤ 30) 0.2 0.62 390 mm2 mm × mm Grad deg. nA A/W Electrons Photon mV Abmessung der bestrahlungsempfindlichen Fläche L × B L×W Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, λ = 400 nm Spectral sensitivity Quantenausbeute, λ = 400 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage ϕ IR Sλ η VO 2002-01-24 2 BPW 34 B, BPW 34 BS Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Kurzschlußstrom Short-circuit current Ee = 0.5 mW/cm2, λ = 400 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 400 nm Nachweisgrenze, VR = 10 V, λ = 400 nm Detection limit Symbol Symbol Wert Value 7.4 (≥ 5.4) Einheit Unit µA ISC tr, tf 25 ns VF C0 TCV TCI NEP 1.3 72 – 2.6 0.18 1.3 × 10– 13 V pF mV/K %/K W ----------Hz cm × Hz ------------------------W D* 2.1 × 1012 2002-01-24 3 BPW 34 B, BPW 34 B Relative Spectral Sensitivity Srel = f (λ) 100 S rel % 80 OHF01001 Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) ΙP 10 3 µA OHF01066 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00958 10 4 mV VO 10 3 10 2 VO 60 10 1 ΙP 10 2 80 60 40 10 0 10 1 40 20 20 0 400 10 -1 600 800 1000 nm 1200 λ 10 0 10 1 10 2 10 10 3 lx 10 4 EV 0 0 0 20 40 60 80 ˚C 100 TA Dark Current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 C pF 80 OHF00081 Dark Current IR = f (TA), VR = 5 V, E = 0 10 3 OHF00082 ΙR pA Ι R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Srel = f (ϕ) Directional Characteristics 40 30 20 10 0 1.0 OHF01402 ϕ 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2002-01-24 4 BPW 34 B, BPW 34 BS Maßzeichnung Package Outlines BPW 34 B 5.4 (0.213) Cathode marking 4.0 (0.157) 3.7 (0.146) 0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028) 4.9 (0.193) 4.5 (0.177) 0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 4.3 (0.169) Chip position 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 0 ... 5˚ Photosensitive area 2.65 (0.104) x 2.65 (0.104) 5.08 (0.200) spacing GEOY6643 BPW 34 BS Chip position 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 0.2 (0.008) 0.1 (0.004) GEOY6863 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.9 (0.035) 0.7 (0.028) 1.8 (0.071) ±0.2 (0.008) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 5 Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-24 0...5 ˚ 3.5 (0.138) 3.0 (0.118) BPW 34 B, BPW 34 BS Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-01-24 6