BPW34FA_04

Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FA BPW 34 FAS BPW 34 FAS (R18R) Wesentliche Merkmale • Speziell geeignet für den Wellenlängenbereich von 830 nm bis 880 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 FAS/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten Anwendungen • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Gerätefernsteuerung • Lichtschranken für Gleich- und Wechsellichtbetrieb Typ Type BPW 34 FA BPW 34 FAS BPW 34 FAS (R18R) Bestellnummer Ordering Code Q62702-P1129 Q62702-P463 Q62702-P1829 Features • Especially suitable for the wavelength range of 830 nm to 880 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 FAS/(R18R): Suitable for vapor-phase and IR-reflow soldering Applications • IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment • Photointerrupters 2004-03-10 1 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Kennwerte (TA = 25 °C, λ = 870 nm) Characteristics Bezeichnung Parameter Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage 2004-03-10 Symbol Symbol Wert Value – 40 … + 100 16 32 150 Einheit Unit °C V V mW Top; Tstg VR VR (t < 2 min) Ptot Symbol Symbol Wert Value 50 (≥ 40) Einheit Unit µA Ip λS max λ 880 730 … 1100 nm nm A L×B L×W ϕ 7.00 2.65 × 2.65 mm2 mm × mm ± 60 2 (≤ 30) 0.65 0.93 320 (≥ 250) Grad deg. nA A/W Electrons Photon mV IR Sλ η VO 2 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Kennwerte (TA = 25 °C, λ = 870 nm) Characteristics (cont’d) Bezeichnung Parameter Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V Nachweisgrenze, VR = 10 V, Detection limit Symbol Symbol Wert Value 23 20 Einheit Unit µA ns ISC tr, tf VF C0 TCV TCI NEP 1.3 72 – 2.6 0.03 3.9 × 10– 14 V pF mV/K %/K W ----------Hz cm × Hz ------------------------W D* 6.8 × 1012 2004-03-10 3 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Relative Spectral Sensitivity Srel = f (λ) 100 Srel % 80 OHF01430 Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) ΙP 10 3 µA OHF01428 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00958 10 4 mV VO 10 3 10 2 70 60 50 40 30 VO 10 1 10 2 80 60 ΙP 10 0 10 1 40 20 20 10 0 400 10 600 800 1000 nm 1200 λ -1 10 0 10 1 10 2 µW/cm 2 Ee 10 10 4 0 0 0 20 40 60 80 ˚C 100 TA Dark Current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 C pF 80 OHF00081 Dark Current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 ΙR pA Ι R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Srel = f (ϕ) Directional Characteristics 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2004-03-10 4 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Maßzeichnung Package Outlines BPW 34 FA 5.4 (0.213) Cathode marking 4.0 (0.157) 3.7 (0.146) 0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028) 4.9 (0.193) 4.5 (0.177) 0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 4.3 (0.169) Chip position 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 0 ... 5˚ Photosensitive area 2.65 (0.104) x 2.65 (0.104) 5.08 (0.200) spacing GEOY6643 BPW 34 FAS Chip position 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) GEOY6863 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.9 (0.035) 0.7 (0.028) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2004-03-10 5 3.5 (0.138) 3.0 (0.118) BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FAS (R18R) Chip position 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 4.5 (0.177) 4.3 (0.169) 6.2 (0.244) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) 0.9 (0.035) 0.7 (0.028) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2004-03-10 6 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) GEOY6916 0...5 ˚ 0.2 (0.008) 0.1 (0.004)