BPX63

Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current BPX 63 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm (typ. 5 pA) • TO-18, Bodenplatte, mit klarem Epoxy-Gießharz Anwendungen • Belichtungsmesser, Belichtungsautomaten Typ Type BPX 63 Bestellnummer Ordering Code Q62702-P55 Features • Especially suitable for applications from 350 nm to 1100 nm • Low reverse current (typ. 5 pA) • TO-18, base plate, transparent epoxy resin lens Applications • Exposure meters, automatic exposure timers 2001-02-21 1 BPX 63 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 … + 80 230 Einheit Unit °C °C Top; Tstg TS VR Ptot 7 200 V mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Symbol Symbol Wert Value 10 (≥ 8) 800 350 … 1100 Einheit Unit nA/Ix nm nm S λS max λ A 0.97 0.985 × 0.985 0.2 … 0.8 ± 75 5 (≤ 20) ≤ 0.4 mm2 mm × mm mm Grad deg. pA pA/mV Abmessung der bestrahlungsempfindlichen Fläche L × B Dimensions of radiant sensitive area L×W Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 1 V Dark current Nullpunktsteilheit, E = 0 Zero crossover 2001-02-21 2 H ϕ IR S0 BPX 63 Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlußstrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 10 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 1 V, λ = 850 nm Nachweisgrenze, VR = 1 V, λ = 850 nm Detection limit Symbol Symbol Wert Value 0.50 0.73 450 (≥ 380) 10 1.3 Einheit Unit A/W Electrons Photon mV µA µs Sλ η VO ISC tr, tf VF C0 TCV TCI NEP 1.3 100 – 2.6 0.16 2.5 × 10– 15 V pF mV/K %/K W ----------Hz cm × Hz ------------------------W D* 3.9 × 1013 2001-02-21 3 BPX 63 Relative Spectral Sensitivity Srel = f (λ) 100 S rel % 80 OHF00062 Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Total Power Dissipation Ptot = f (TA) 60 40 20 0 400 600 800 1000 nm 1200 λ Dark Current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark Current IR = f (TA), Ev = 0 V, VR = 1 V Srel = f (ϕ) Directional Characteristics 2001-02-21 4 BPX 63 Maßzeichnung Package Outlines 2.7 (0.106) ø0.45 (0.018) Chip position ø4.3 (0.169) ø4.1 (0.161) 1.1 1.1 (0 .0 (0 0.9 43 ( ) 5) 1 3 0.0 2.54 (0.100) spacing 0.9 (0 .03 .04 5) 3) ø5.5 (0.217) ø5.2 (0.205) 14.5 (0.571) 12.5 (0.492) 3.6 (0.142) 3.0 (0.118) Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) GETY6625 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 5