BPX81_01

NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm • Hohe Linearität • Einstellige Zeilenbauform aus klarem Epoxy • Gruppiert lieferbar Anwendungen • Computer-Blitzlichtgeräte • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type BPX 81 BPX 81-2/3 BPX 81-3 BPX 81-3/4 BPX 81-4 Bestellnummer Ordering Code Q62702-P20 Q62702-P3583 Q62702-P43-S3 Q62702-P3584 Q62702-P43-S4 Features • Especially suitable for applications from 440 nm to 1070 nm • High linearity • One-digit array package of transparent epoxy • Available in groups Applications • • • • Computer-controlled flashes Miniature photointerrupters Industrial electronics For control and drive circuits 2001-02-21 1 BPX 81 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 … + 80 230 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS Ptot RthJA 32 50 200 90 750 V mA mA mW K/W 2001-02-21 2 BPX 81 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol λS max λ Wert Value 850 440 … 1070 Einheit Unit nm nm A L×B L×W H ϕ 0.17 0.6 × 0.6 1.3 … 1.9 ± 18 6 mm2 mm × mm mm Grad deg. pF CCE ICEO 25 (≤ 200) nA 2001-02-21 3 BPX 81 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3 Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -2 Wert Value -3 -4 Einheit Unit IPCE IPCE tr, tf 0.25 … 0.50 1.4 5.5 0.40 … 0.80 2.2 6 ≥ 0.63 3.4 8 mA mA µs VCEsat 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2001-02-21 4 BPX 81 Relative Spectral Sensitivity Srel = f (λ) Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Dark Current ICEO = f (VCE), E = 0 Directional Characteristics Srel = f (ϕ) 2001-02-21 5 BPX 81 Maßzeichnung Package Outlines 2.7 (0.106) 2.5 (0.098) 2.4 (0.094) 2.1 (0.083) 3.5 (0.138) 0.7 (0.028) 0.6 (0.024) 0.25 (0.010) 0.15 (0.006) 0 ... 5˚ 2.1 (0.083) 1.5 (0.059) A 2.54 (0.100) spacing 0.4 A Radiant sensitive area (0.4 x 0.4) 1.4 (0.055) 1.0 (0.039) Collector (BPX 81) Cathode (LD 261) 1) Detaching area for tools, flash not true to size. GEOY6021 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 6 3.0 (0.118) 0.5 (0.020) 0.4 (0.016) 1.9 (0.075) 1.7 (0.067) 3.6 (0.142) 3.2 (0.126) Chip position