F0094U

F0094U

  • 厂商:

    OSRAM(欧司朗)

  • 封装:

  • 描述:

    F0094U - GaAs Infrared Light Emitting Diode (950 nm, 12 mil) - OSRAM GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
F0094U 数据手册
GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED® Gehäuse • Chipgröße 300 x 300 µm2 • GaAs-LED mit sehr hohem Wirkungsgrad • Gute Linearität (Ie = f [IF]) bei hohen Strömen • Gleichstrom- oder Impulsbetrieb möglich • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit Anwendungen • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser • Industrieelektronik • „Messen/Steuern/Regeln“ • Automobiltechnik • Sensorik • Alarm- und Sicherungssysteme • IR-Freiraumübertragung Typ Type F 0094U Bestellnummer Ordering Code on request Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • Miniature photointerrupters • • • • • • Gehäuse Package Infrarot emittierender Chip, Oberseite Anodenanschluß, Oberfläche aufgerauht Infrared emitting die, top side anode connection, surface frosted Infrarot emittierender Chip, Oberseite Anodenanschluß Infrared emitting die, top side anode connection Industrial electronics Drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission F 0094V Q67220-C1268 2002-02-04 1 F 0094U, F 0094V Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header without resin, TA = 25 °C) Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 10 mA Spektrale Bandbreite bei 50% von Imax, IF = 10 mA Spectral bandwidth at 50% of Imax Sperrspannung Reverse voltage IR = 10 µA, Symbol Symbol min. λpeak Wert1) Value1) typ. 950 max. nm Einheit Unit ∆λ 55 nm VR 5 30 V Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω Durchlaβspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Gesamtstrahlungsfluβ4) Total radiant flux4) IF = 100 mA, tp = 20 ms F 0094U F 0094V Temperaturkoeffizient2) von λ Temperature coefficient2) of λ IF = 100 mA; Temperaturkoeffizient2) von VF Temperature coefficient2) of VF IF = 100 mA; 0.5/0.4 µs VF Φe 1.35 3.0 1.5 V 4.8 4.2 TCλ 8 7 0.3 mW mW nm/K TCV -1.5 mV/K 2002-02-04 2 F 0094U, F 0094V Mechanische Werte Mechanical values Bezeichnung Parameter Chipkantenlänge (x-Richtung) Length of chip edge (x-direction) Chipkantenlänge (y-Richtung) Length of chip edge (y-direction) Durchmesser des Wafers Diameter of the wafer Chiphöhe Die height Bondpaddurchmesser Diameter of bondpad Symbol Symbol min. 0.28 0.28 Wert1) Value1) typ. 0.3 0.3 76.2 170 185 135 200 max. 0.32 0.32 mm mm mm µm µm Einheit Unit Lx Ly D H d Bezeichnung Parameter Vorderseitenmetallisierung Metallization frontside Rückseitenmetallisierung Metallization backside Trennverfahren Dicing Verbindung Chip - Träger Die bonding Wert Value Aluminium Aluminum Goldlegierung Gold alloy Sägen Sawing Kleben Epoxy bonding 2002-02-04 3 F 0094U, F 0094V Grenzwerte3) (TA = 25 °C) Maximum Ratings3) (TA = 25°C) Bezeichnung Parameter Maximaler Betriebstemperaturbereich Maximum operating temperature range Maximaler Lagertemperaturbereich Maximum storage temperatur range Maximaler Durchlaßstrom Maximum forward current Maximaler Stoßstrom maximum surge current tp = 10 µs, D = 0.005 Maximale Sperrschichttemperatur Maximum junction temperature Symbol Symbol Top Tstg IF IS Wert Value - 40...+100 - 40...+100 100 3 Einheit Unit °C °C mA A Tj 125 °C 2002-02-04 4 F 0094U, F 0094V Relative Spectral Emission2) Irel = f (λ), TA = 25 °C OHR01938 Radiant Intensity2) Ιe = f (IF ) Ιe 100 mA Single pulse, tp = 20 µs, TA = 25 °C 100 % Ιe Ι e (100 mA) 10 1 OHR00864 Ι rel 80 60 10 0 40 20 0 880 920 960 1000 nm λ 1060 10 -1 10 -2 10 -1 10 0 A ΙF 10 1 Forward Current2) ,IF = f (VF), single pulse, tp = 20 µs, TA = 25 °C Permissible Pulse Handling Capability2) IF = f (tP) duty cycle D = parameter, TA = 25 °C OHR01554 10 1 10 4 OHR00865 ΙF A Ι F mA 5 D = 0.005 0.01 D= τ T τ ΙF T 10 0 0.02 10 -1 10 3 0.05 0.1 0.2 5 10 -2 0.5 DC 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 τ 5 10 -3 0 1 2 3 4 5 6 V VF 8 2002-02-04 F 0094U, F 0094V Maßzeichnung Chip Outlines 0.135 (0.0053) 0.3 (0.0118) p-contact 0.185 (0.0073) n-contact GMOY6080 Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as follows: mm (inch). 2002-02-04 6 F 0094U, F 0094V Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information generally describes the type of component and shall not be considered as assured characteristics or detailed specification. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our sales organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized by us for such purpose! Critical components5), may only be used in life-support devices or systems6) with the express written approval of OSRAM OS. 1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value. For final electrical testing a spot check with sufficient statistical accuracy is carried out. Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement. 2) Based on data measured in OSRAM Opto Semiconductor’s TOPLED® package. They represent typical1) data. 3) Maximum ratings are strongly package dependent and may differ between different packages. The values given represent the chip in an OSRAM OS TOPLED® package and are only valid for this package. 4) Value is referenced to the vendor’s measurement system (correlation to customer product(s) is required). 5) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 6) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-02-04 7
F0094U
物料型号: - F 0094U:红外发射芯片,顶面阳极连接,表面磨砂。 - F 0094V:红外发射芯片,顶面阳极连接。

器件简介: - 该器件为GaAs红外发光二极管,具有高效率、良好的线性特性(在高电流下),可以直流或脉冲操作,具有高可靠性和高脉冲承受能力。

引脚分配: - 这两个型号的芯片均为顶面阳极连接,没有明确提及具体的引脚数量和布局。

参数特性: - 典型总辐射功率:在TOPLED®封装下,100 mA时为15 mW。 - 芯片尺寸:300×300 µm²。 - 发射波长:峰值发射波长为950 nm。 - 光谱带宽:在50% Imax时为55 nm。 - 反向电压:5至30 V。 - 开关时间:在100 mA、50 Ω下,从10%到90%和从90%到10%的时间为0.5/0.4 µs。 - 正向电压:在100 mA、20 ms下为1.35至3.0 V,在1 A、100 µs下为1.5 V。 - 总辐射通量:F 0094U为8 mW,F 0094V为7 mW。 - 温度系数:发射波长的温度系数为0.3 nm/K,正向电压的温度系数为-1.5 mV/K。

功能详解: - 该器件适用于需要高效率和良好线性特性的应用,如迷你光电开关、工业电子、汽车技术、传感技术、报警和安全设备以及红外无线传输。

应用信息: - 迷你光电开关、工业电子、驱动和控制电路、汽车技术、传感技术、报警和安全设备、红外无线传输。

封装信息: - 封装类型为TOPLED®,具体尺寸和形状未在文档中详细描述,但提到了芯片尺寸和一些机械参数,如芯片边缘长度、芯片高度、晶圆直径和焊盘直径。
F0094U 价格&库存

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