Q65110A1569

Engwinklige LED in MIDLED-Gehäuse Narrow beam LED in MIDLED package Lead (Pb) Free Product - RoHS Compliant SFH 4650 SFH 4655 SFH 4650 SFH 4655 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Infrarot LED mit hoher Ausgangsleistung (40 mW) • Emissionswellenlänge typ. 850 nm • Enger Abstrahlwinkel ( 20° ) • geringe Bauhöhe • Als Toplooker und Sidelooker einsetzbar • SFH 4650: Gurtung als Toplooker SFH 4655: Gurtung als Sidelooker Anwendungen • Infrarotbeleuchtung für CMOS Kameras • IR-Datenübertragung • Sensorik in der Automobiltechnik • Fernsteuerung Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gem äß den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt werden. Typ Type SFH 4650 SFH 4655 Bestellnummer Ordering Code Q65110A1572 Q65110A1569 Features • • • • • • High Power (40 mW) Infrared LED Peak wavelength typ. 850 nm Narrow halfangle ( 20°) low profile component Usable as top-looking and side-looking device SFH 4650: Taping as Toplooker SFH 4655: Taping as Sidelooker Applications • Infrared Illumination for CMOS cameras • IR Data Transmission • Automotive sensors • Remote controls Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 “Safety of laser products”. Strahlstärkegruppierung (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping Ie (mW/sr) >16 (typ. 40) >16 (typ. 40) 2005-03-08 1 Vorläufige Daten / Preliminary Data SFH 4650, SFH 4655 ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, 10 s, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht1) Thermal resistance junction Wärmewiderstand Sperrschicht2) Thermal resistance junction 1) Symbol Symbol Wert Value – 40 5 100 1 180 340 180 + 100 Einheit Unit C V mA A mW K/W K/W Top; Tstg VR IF IFSM Ptot RthJA RthJS Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm2 ambient mounted on PC-board (FR4), padsize 16 mm2 each 2) Lötstelle bei Montage auf Metall-Block soldering point, mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Abstrahlwinkel Half angle Symbol Symbol peak Wert Value 850 Einheit Unit nm 35 nm 20 Grad deg. 2005-03-08 2 Vorläufige Daten / Preliminary Data Kennwerte (TA = 25 C) Characteristics (cont’d) Bezeichnung Parameter Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, SFH 4650, SFH 4655 Symbol Symbol Wert Value 0.09 0.3 12 0.3 Einheit Unit mm2 mm ns A LB LW tr, tf VF VF IR 1.5 ( 1.8) 2.4 (< 3.0) 0.01 ( 10) V V A e 40 mW TCI – 0.5 %/K IF = 100 mA Temperature coefficient of Ie or e, F I = 100 mA TCV TC – 0.7 + 0.2 mV/K nm/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA 2005-03-08 3 Vorläufige Daten / Preliminary Data Strahlstärke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 s 1) 1) SFH 4650, SFH 4655 Symbol -S Ie min Ie max Ie typ 16 32 200 Werte Values -T 25 50 250 40 80 300 -U Einheit Unit mW/sr mW/sr mW/sr Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) Only one group in one packing unit, (variation lower 2:1) 2005-03-08 4 Vorläufige Daten / Preliminary Data Relative Spectral Emission Irel = f ( ) 100 % OHL01714 SFH 4650, SFH 4655 Ie = f (I F ) Ie 100 mA OHL01715 Radiant Intensity Forward Current IF = f (VF) Single pulse, tp = 20 s 100 A OHL01713 Single pulse, tp = 20 s 10 1 Ie I e (100 mA) 10 0 5 IF I rel 80 10-1 5 60 10 -1 5 40 10-2 5 10 -2 20 10-3 5 5 0 700 750 800 850 nm 950 10 -3 0 10 5 10 1 5 10 2 mA 10 3 10 -4 0 0.5 1 1.5 2 2.5 V 3 IF VF Max. Permissible Forward Current IF = f (TA); RthJA = 450 K/W1) 110 mA OHF02533 Permissible Pulse Handling Capability IF = f (tp), TA = 25 C duty cycle D = parameter IF 1.2 A 1.0 OHF02532 D = TP t tP IF T I F 90 80 70 60 D= 0.8 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.6 50 40 30 20 10 0 0 20 40 60 80 100 0.2 0.4 0 -5 10 10-4 10 -3 10-2 10 -1 100 10 1 s 102 TA tp Radiation Characteristics Irel = f ( ) OHF02432 1.0 0.8 0.6 0.4 0.2 0 1) 1.0 0.8 0.6 0.4 mounted on PC board FR 4 (pad size 16 mm 2) 5 2005-03-08 Vorläufige Daten / Preliminary Data Maßzeichnung Package Outlines SFH 4650, SFH 4655 Silicone area 1) (1.2) Isolating area 1.7 1.5 0.65 0.45 3.3 2.9 0.65 0.45 Pad 1 metallisation 1) Pad 2 metallisation (0.8) Backside metallisation OHF02423 Device casted with silicone. Avoid mechanical stress on silicone surface. Maße werden in mm angegeben. Dimensions are specified in mm. Gehäuse package Anschlussbelegung Pin configuration MID mit klarem Silikonverguss MID casted with clear Silicone Pad 1 = Anode/ anode Pad 2 = Kathode / cathode 2005-03-08 6 Vorläufige Daten / Preliminary Data Empfohlenes Lötpaddesign Recommended Solderpad Design Bauteil positioniert Component location on pad SFH 4650, SFH 4655 1.7 Paddesign for improved heat dissipation 2 Cu-area Solder resist Bauteil positioniert Component location on pad OHF02421 2.4 Paddesign for improved heat dissipation 2 Cu-area Solder resist OHF02422 2005-03-08 7 Vorläufige Daten / Preliminary Data Lötbedingungen Soldering Conditions IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering 300 SFH 4650, SFH 4655 Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020B) (acc. to J-STD-020B) OHLA0687 T 250 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 100 s max 10 s min Ramp Down 6 K/s (max) min. condition for IR Reflow Soldering: solder point temperature 235 °C for at least 10 sec. 50 0 0 50 100 150 200 250 s 300 t Verarbeitungshinweis: Das Gehäuse ist mit Silikon vergossen. Mechanischer Streß auf der Bauteiloberfläche sollte so gering wie möglich gehalten werden. Handling indication: The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as possible. Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2005-03-08 8