SFH302

NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type SFH 302 Bestellnummer Ordering Code Q62702-P1641 Features • Especially suitable for applications from 450 nm to 1100 nm • High linearity • TO-18, base plate, transparent exposy resin lens, with base connection • Available in groups Applications • Photointerrupters • Industrial electronics • For control and drive circuits 2001-02-22 1 SFH 302 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 … + 80 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS VEB Ptot RthJA 50 50 200 7 150 450 V mA mA V mW K/W 2001-02-22 2 SFH 302 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessungen der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 10 V, E = 0 Symbol Symbol λS max λ Wert Value 880 450 … 1100 Einheit Unit nm nm A L×B L×W H ϕ 0.675 1×1 0.2 … 0.8 ± 50 mm2 mm × mm mm Grad deg. IPCB IPCB 4.2 12.5 µA µA CCE CCB CEB ICEO 23 39 47 20 (≤ 200) pF pF pF nA 2001-02-22 3 SFH 302 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A VCE = 5 V Symbol Symbol -2 -3 Wert Value -4 -5 -6 Einheit Unit IPCE IPCE 0.4 … 0.8 0.63 … 1.25 1 … 2 1.6 … 3.2 ≥ 2.5 mA 1.75 2.8 4.5 7.1 9.5 mA Anstiegszeit/Abfallzeit tr, tf Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.5 mW/cm2 Stromverstärkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) 9 11 14 17 20 µs VCEsat 200 200 200 200 200 mV I PCE ---------I PCB 140 230 360 570 750 – IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2001-02-22 4 SFH 302 Relative Spectral Sensitivity Srel = f (λ) Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Output Characteristics IC = f (VCE), IB = Parameter Directional Characteristics Srel = f (ϕ) 2001-02-22 5 SFH 302 Maßzeichnung Package Outlines Radiant sensitive area ø4.3 (0.169) ø4.1 (0.161) Chip position (2.7 (0.106)) ø0.45 (0.018) 1.1 1.1 (0 .0 (0 0.9 43 ( ) 5) EC B 3 0.0 0.9 (0 .03 .04 5) 3) 14.5 (0.571) 12.5 (0.492) 3.6 (0.142) 3.0 (0.118) ø5.5 (0.217) ø5.2 (0.205) GETY6017 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 6 2.54 (0.100) spacing