SFH3211-4

NPN-Silizium-Fototransistor in SMT TOPLED® RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED® RG-Package SFH 3211 SFH 3211 FA SFH 3211 SFH 3211 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm (SFH 3211) und bei 880 nm (SFH 3211 FA) • Hohe Linearität • Gruppiert lieferbar Anwendungen • Miniaturlichtschranken • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Type SFH 3211 SFH 3211-3/-4 SFH 3211 FA SFH 3211 FA-3/-4 Bestellnummer Ordering Code Q62702-P5127 Q62702-P5481 Q62702-P5443 Q62702-P5482 Features • Especially suitable for applications from 380 nm to 1150 nm (SFH 3211) and of 880 nm (SFH 3211 FA) • High linearity • Available in groups Applications • Miniature photointerrupters • Industrial electronics • For control and drive circuits 2002-01-25 1 SFH 3211, SFH 3211 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value – 40 … + 100 35 15 75 165 450 Einheit Unit °C V mA mA mW K/W Top; Tstg VCE IC ICS Ptot RthJA 2002-01-25 2 SFH 3211, SFH 3211 FA Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Symbol Symbol SFH 3211 λS max λ 860 380 … 1150 Wert Value SFH 3211 FA 900 730 … 1120 nm nm Einheit Unit A L×B L×W 0.045 0.45 × 0.45 0.5 … 0.7 ± 60 5.0 1 (≤ 200) 0.045 0.45 × 0.45 0.5 … 0.7 ± 60 5.0 1 (≤ 200) mm2 mm × mm mm Grad deg. pF nA Abstand Chipoberfläche zu Gehäuseoberfläche H Distance chip front to case surface Halbwinkel Half angle Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0 ϕ CCE ICEO 2002-01-25 3 SFH 3211, SFH 3211 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol SFH 3211/FA Fotostrom, λ = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V SFH 3211: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ -2 Wert Value -3 -4 Einheit Unit IPCE IPCE tr, tf ≥ 16 16 … 32 420 25 … 50 650 7 40 … 80 1000 8 µA µA 7 6 µs Kollektor-EmitterVCEsat Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.1 mW/cm2 1) 1) 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2002-01-25 4 SFH 3211, SFH 3211 FA Relative Spectral Sensitivity, SFH 3211 Srel = f (λ) 100 % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 OHF00207 Relative Spectral Sensitivity, SFH 3211 FA Srel = f (λ) 100 S rel % 80 OHF00468 Photocurrent IPCE = f (Ee), VCE = 5 V Ι PCE 10 3 µA OHF01924 Srel 10 2 60 10 40 1 4 3 2 10 0 20 λ 0 400 500 600 700 800 900 λ nm 1100 10 -1 -3 10 10 -2 mW/cm 2 Ee 10 0 Total Power Dissipation Photocurrent Dark Current Ptot = f (TA) 200 mW P tot 160 OHF00871 IPCE = f (VCE), Ee = Parameter Ι PCE 10 0 mA OHF01529 ICEO = f (VCE), E = 0 Ι CEO 10 1 nA OHF01527 1 mW cm 2 mW cm 2 mW cm 2 0.5 10 0 120 0.25 10 -1 10 -1 mW 0.1 2 cm 80 10 -2 40 0 0 20 40 60 80 ˚C 100 TA 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Dark Current ICEO = f (TA), VCE = 5 V, E = 0 Ι CEO 10 3 nA OHF01530 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5.0 C CE pF 4.0 OHF01528 Photocurrent IPCE /IPCE25° = f (TA), VCE = 5 V Ι PCE 25 1.4 1.2 Ι PCE 1.6 OHF01524 10 2 3.5 3.0 1.0 0.8 0.6 0.4 10 1 2.5 2.0 1.5 10 0 1.0 0.5 0.2 10 -1 -25 0 25 50 75 ˚C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA 2002-01-25 5 SFH 3211, SFH 3211 FA Maßzeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 0.3 (0.012) max 2.1 (0.083) 1.7 (0.067) 1.0 (0.039) 0.9 (0.035) 0.3 (0.012) min 2.1 (0.083) (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 4˚±1 0...0.1 (0.004) 0.6 (0.024) 0.4 (0.016) GPLY6067 Collector marking Collector Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-25 6 5.4 (0.213) 5.0 (0.197) SFH 3211, SFH 3211 FA Löthinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Lötbadtemperatur Maximal zulässige Lötzeit Max. Perm. Soldering Time 10 s Abstand Lötstelle – Gehäuse Distance between Solder Joint and Case – Reflowlötung Reflow Soldering Lötzonentemperatur Maximale Durchlaufzeit Temperature of the Soldering Bath TOPLED RG 260 °C Temperature of Soldering Zone 245 °C Max. Transit Time 10 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-01-25 7