SFH3219

NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse Silicon NPN Phototransistor in SMT-Package with lens SFH 3219 Wesentliche Merkmale • TOPLED mit Linse • Speziell geeignet für Anwendungen im Bereich von 430 nm bis 1150 nm • Hohe Linearität • Für alle Lötverfahren geeignet • Gehäusegleich mit SFH 4209, SFH 4219, SFH 4289 Anwendungen • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ • Automobiltechnik • Sensorik Typ Type SFH 3219 Bestellnummer Ordering Code Q62702-P5551 Features • TOPLED with lens • Especially suitable for applications from 430 nm to 1150 nm • High linearity • Suitable for all soldering methods • Same package as SFH 4209, SFH 4219, SFH 4289 Applications • • • • • Miniature photointerrupters Industrial electronics For control and drive circuits Automotive technology Sensor technology 2001-11-22 1 SFH 3219 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value – 40 … + 100 35 15 75 165 450 Einheit Unit °C V mA mA mW K/W Top; Tstg VCE IC ICS Ptot RthJA 2001-11-22 2 SFH 3219 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 20 V, E = 0 Fotostrom Photo current Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 20 µA Ee = 0.1 mW/cm2 Symbol Symbol λS max λ Wert Value 990 430 … 1150 Einheit Unit nm nm A L×B L×W ϕ 0.045 0.45 × 0.45 ± 25 5.0 1 (≤ 50) mm2 mm × mm Grad deg. pF nA CCE ICEO IPCE ≥ 63 µA t r, t f 7 µs VCEsat 150 mV 2001-11-22 3 SFH 3219 Directional Characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ OHF00006 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 2001-11-22 4 SFH 3219 Relative Spectral Sensitivity Srel = f (λ) Srel 100 % 80 70 0.1 OHF00207 Photocurrent IPCE = f (VCE), Ee = Parameter Ι PCE 10 0 mA OHF00007 Photocurrent IPCE /IPCE25° = f (TA), VCE = 5 V Ι PCE 25 1.4 0.4 mW cm 2 mW cm 2 mW cm 2 Ι PCE 1.6 OHF01524 0.2 1.2 1.0 0.8 0.6 0.4 0.2 60 50 40 30 20 10 0 400 500 600 700 800 900 10 -2 10 -1 λ nm 1100 0 5 10 15 20 25 30 V 35 V CE 0 -25 0 25 50 75 C 100 TA Total Power Dissipation Ptot = f (TA) 200 mW P tot 160 OHF00871 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5.0 C CE pF 4.0 OHF01528 Dark Current ICEO = f (VCE), E = 0 Ι CEO 10 1 nA OHF01527 10 0 3.5 120 3.0 2.5 10 -1 80 2.0 1.5 10 -2 40 1.0 0.5 0 0 20 40 60 80 ˚C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Dark Current ICEO = f (TA), VCE = 5 V, E = 0 Ι CEO 10 3 nA OHF01530 10 2 10 1 10 0 10 -1 -25 0 25 50 75 ˚C 100 TA 2001-11-22 5 SFH 3219 Maßzeichnung Package Outlines 3.5 (0.138) max. 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) ø2.60 (0.102) 1.1 (0.043) 0.5 (0.020) 0.6 (0.024) 0.4 (0.016) 0.1 (0.004) (typ.) 0.18 (0.007) 0.13 (0.005) 2 Package marking GEOY6956 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Kathodenkennung: Cathode mark: abgeschrägte Ecke bevelled edge 2001-11-22 6 ø2.55 (0.100) 3.4 (0.134) 3.0 (0.118) 3.7 (0.146) 3.3 (0.130) SFH 3219 Löthinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Lötbadtemperatur Maximal zulässige Lötzeit Max. Perm. Soldering Time 10 s Reflowlötung Reflow Soldering Lötzonentemperatur Maximale Durchlaufzeit Temperature of the Soldering Bath TOPLED 260 °C Temperature of Soldering Zone 245 °C Max. Transit Time 10 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-11-22 7